SALE

HoT

3398 In Stock

2N7002-7

3398 In Stock

2N7002-7

$0.01297

Manufacturer No:

Diodes Incorporated

Manufacturer:

Diodes Incorporated

Category:

Single MOSFETs Transistors

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

Description Differential:

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  • QTY UNIT PRICE TOTAL PRICE
  • 1 $0.01258 $0.01258
  • 50 $0.5965 $0.01193
  • 100 $1.154 $0.01154
  • 1000 $11.02 $0.01102

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    Type

    DESCRIPTION

    RoHS

    Mount

    Surface Mount

    Width

    1.3mm

    Height

    1mm

    Length

    2.9mm

    Pbfree

    yes

    Series

    Weight

    8.193012mg

    FET Type

    N-Channel

    ECCN Code

    EAR99

    Inventory

    49335

    Lead Free

    Contains Lead

    Packaging

    Tape & Reel (TR)

    Pin Count

    3

    Published

    2005

    Rise Time

    Vgs (Max)

    ±20V

    REACH SVHC

    No SVHC

    Rds On Max

    Resistance

    Technology

    MOSFET (Metal Oxide)

    Nominal Vgs

    Part Status

    Obsolete

    RoHS Status

    Non-RoHS Compliant

    Subcategory

    FET General Purpose Power

    Halogen Free

    JESD-30 Code

    R-PDSO-G3

    Configuration

    JEDEC-95 Code

    JESD-609 Code

    e3

    Mounting Type

    Surface Mount

    Surface Mount

    Terminal Form

    GULL WING

    Current Rating

    115mA

    FET Technology

    Number of Pins

    Operating Mode

    ENHANCEMENT MODE

    Package / Case

    TO-236-3, SC-59, SOT-23-3

    Case Connection

    Fall Time (Typ)

    Terminal Finish

    Matte Tin (Sn)

    Base Part Number

    Lifecycle Status

    Factory Lead Time

    Input Capacitance

    Power Dissipation

    150mW

    Terminal Position

    DUAL

    Threshold Voltage

    Additional Feature

    HIGH RELIABILITY, LOW THRESHOLD

    Number of Channels

    1

    Number of Elements

    1

    Turn On Delay Time

    7 ns

    Vgs(th) (Max) @ Id

    2.5V @ 250μA

    Voltage - Rated DC

    60V

    Radiation Hardening

    Turn-Off Delay Time

    11 ns

    Qualification Status

    Not Qualified

    Element Configuration

    Single

    Max Power Dissipation

    Operating Temperature

    -55°C~150°CTJ

    Polarity/Channel Type

    Power Dissipation-Max

    370mW Ta

    Reach Compliance Code

    Number of Terminations

    3

    Rds On (Max) @ Id, Vgs

    7.5 Ω @ 50mA, 5V

    Transistor Application

    SWITCHING

    Feedback Cap-Max (Crss)

    5 pF

    Max Dual Supply Voltage

    Supplier Device Package

    DS Breakdown Voltage-Min

    Max Operating Temperature

    Min Operating Temperature

    Drain to Source Resistance

    Transistor Element Material

    SILICON

    Drain Current-Max (Abs) (ID)

    Gate Charge (Qg) (Max) @ Vgs

    Gate to Source Voltage (Vgs)

    20V

    Avalanche Energy Rating (Eas)

    Continuous Drain Current (ID)

    115mA

    Peak Reflow Temperature (Cel)

    260

    Drain to Source Voltage (Vdss)

    Drain-source On Resistance-Max

    Pulsed Drain Current-Max (IDM)

    Moisture Sensitivity Level (MSL)

    1 (Unlimited)

    Drain to Source Breakdown Voltage

    70V

    Input Capacitance (Ciss) (Max) @ Vds

    50pF @ 25V

    Time@Peak Reflow Temperature-Max (s)

    40

    Drive Voltage (Max Rds On,Min Rds On)

    5V 10V

    Current - Continuous Drain (Id) @ 25°C

    115mA Ta

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