RoHS

yes

Mount

Pbfree

Weight

Package

hFE Min

HTS Code

Polarity

ECCN Code

EAR99

Frequency

Inventory

1649

Lead Free

Packaging

Bulk

Pin Count

3

Published

2000

VCEsat-Max

Part Status

Obsolete

Power - Max

830mW

RoHS Status

ROHS3 Compliant

Subcategory

Other Transistors

JESD-30 Code

O-PBCY-T3

Configuration

SINGLE

JEDEC-95 Code

JESD-609 Code

e3

Mounting Type

Through Hole

Surface Mount

NO

Terminal Form

Current Rating

Number of Pins

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Terminal Finish

TIN

Transistor Type

PNP

Base Part Number

BC369

Lifecycle Status

Power Dissipation

Terminal Position

BOTTOM

Additional Feature

Number of Elements

1

Voltage - Rated DC

Radiation Hardening

Qualification Status

Not Qualified

Transition Frequency

140MHz

Element Configuration

Max Breakdown Voltage

Max Collector Current

Max Power Dissipation

Operating Temperature

150°CTJ

Polarity/Channel Type

PNP

Reach Compliance Code

unknown

Frequency - Transition

140MHz

Gain Bandwidth Product

Number of Terminations

3

Transistor Application

SWITCHING

DC Current Gain-Min (hFE)

Collector Current-Max (IC)

Emitter Base Voltage (VEBO)

Power Dissipation-Max (Abs)

0.83W

Transistor Element Material

SILICON

Collector Base Voltage (VCBO)

Collector-Emitter Voltage-Max

Peak Reflow Temperature (Cel)

250

Vce Saturation (Max) @ Ib, Ic

500mV @ 100mA, 1A

Collector-Base Capacitance-Max

Current - Collector (Ic) (Max)

1A

Collector Emitter Voltage (VCEO)

Current - Collector Cutoff (Max)

100nA ICBO

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Time@Peak Reflow Temperature-Max (s)

40

DC Current Gain (hFE) (Min) @ Ic, Vce

85 @ 500mA 1V

Voltage - Collector Emitter Breakdown (Max)

20V