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1576 In Stock
BC807-40-7
1576 In Stock
BC807-40-7
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Manufacturer No:
Diodes Incorporated
Manufacturer:
Diodes Incorporated
Category:
Single BJT Transistors
Package:
Datasheet:
Description Differential:
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Type
DESCRIPTION
RoHS
Mount
Surface Mount
RoHS:
Width
1.4mm
Brand:
Height
1mm
Length
3.05mm
Pbfree
Series
Weight
7.994566mg
Package
hFE Min
250
HTS Code
Polarity
ECCN Code
EAR99
Frequency
HTS Code:
Inventory
7522
Lead Free
Contains Lead
Packaging
Tape & Reel (TR)
Pin Count
3
Published
2008
ECCN Code:
Packaging:
Pin Count:
REACH SVHC
No SVHC
Risk Rank:
Rohs Code:
VCEsat-Max
0.7 V
Part Status
Discontinued
Power - Max
310mW
RoHS Status
Non-RoHS Compliant
Subcategory
Other Transistors
Technology:
JESD-30 Code
Subcategory:
Configuration
JEDEC-95 Code
JESD-30 Code:
JESD-609 Code
e0
Manufacturer:
Mounting Type
Surface Mount
Product Type:
Surface Mount
Terminal Form
GULL WING
Configuration:
JESD-609 Code:
Number of Pins
3
Package / Case
TO-236-3, SC-59, SOT-23-3
Package Shape:
Package Style:
Qualification:
Surface Mount:
Terminal Form:
Contact Plating
Mounting Style:
Package / Case:
Part # Aliases:
Terminal Finish
Tin/Lead (Sn85Pb15)
Transistor Type
PNP
Base Part Number
BC807
Terminal Finish:
Factory Lead Time
Ihs Manufacturer:
Power Dissipation
Product Category:
Terminal Position
DUAL
Additional Feature
Number of Elements
1
Part Package Code:
Reference Standard
Terminal Position:
Number of Elements:
Radiation Hardening
Number of Terminals:
Package Description:
Qualification Status
Not Qualified
Transistor Polarity:
Transition Frequency
100MHz
Element Configuration
Single
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Power Dissipation
310mW
Operating Temperature
-55°C~150°CTJ
Part Life Cycle Code:
Polarity/Channel Type
PNP
Reach Compliance Code
not_compliant
Frequency - Transition
Gain Bandwidth Product
100MHz
Number of Terminations
3
Package Body Material:
Reach Compliance Code:
Transistor Application
SWITCHING
Pd - Power Dissipation:
DC Current Gain hFE Max:
Manufacturer Part Number:
Gain Bandwidth Product fT:
Operating Temperature-Max:
Emitter Base Voltage (VEBO)
5V
Emitter- Base Voltage VEBO:
Power Dissipation-Max (Abs)
Transistor Element Material
SILICON
Collector Base Voltage (VCBO)
Collector- Base Voltage VCBO:
Continuous Collector Current:
Maximum DC Collector Current:
Peak Reflow Temperature (Cel)
235
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector-Base Capacitance-Max
12pF
Current - Collector (Ic) (Max)
Maximum Operating Temperature:
Minimum Operating Temperature:
Peak Reflow Temperature (Cel):
DC Collector/Base Gain hfe Min:
Collector Emitter Voltage (VCEO)
700mV
Current - Collector Cutoff (Max)
100nA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max:
Time@Peak Reflow Temperature-Max (s)
10
Collector-Emitter Saturation Voltage:
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100mA 1V
Voltage - Collector Emitter Breakdown (Max)
Factory Pack Quantity:Factory Pack Quantity:
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