HTS

PPAP

RoHS

Type

Mount

Surface Mount

RoHS:

Width

1.4mm

Brand:

Height

1mm

Length

3.05mm

Pbfree

Series

Weight

7.994566mg

Current

EU RoHS

Package

Series:

Voltage

hFE Min

100

Category

Material

Mounting

Polarity

ECCN (US)

ECCN Code

EAR99

Frequency

Inventory

16225

Lead Free

Contains Lead

Packaging

Tape & Reel (TR)

Pin Count

3

Published

2007

Automotive

Lead Shape

Packaging:

REACH SVHC

No SVHC

VCEsat-Max

PCB changed

Part Status

Discontinued

Power - Max

RoHS Status

Non-RoHS Compliant

Subcategory

Other Transistors

Technology:

JESD-30 Code

Subcategory:

Unit Weight:

Configuration

JEDEC-95 Code

JESD-609 Code

e0

Manufacturer:

Mounting Type

Surface Mount

Package Width

Product Type:

Surface Mount

Terminal Form

GULL WING

Configuration:

Current Rating

Number of Pins

3

Package / Case

TO-236-3, SC-59, SOT-23-3

Package Length

Qualification:

Contact Plating

Mounting Style:

Package / Case:

Part # Aliases:

Terminal Finish

Tin/Lead (Sn85Pb15)

Transistor Type

NPN

Base Part Number

BC817

Supplier Package

Factory Lead Time

Power Dissipation

Product Category:

Terminal Position

DUAL

Number of Elements

1

Reference Standard

Voltage - Rated DC

Radiation Hardening

Qualification Status

Not Qualified

Transistor Polarity:

Transition Frequency

100MHz

Element Configuration

Single

Max Breakdown Voltage

Max Collector Current

800mA

Max Power Dissipation

310mW

Operating Temperature

-65°C~150°CTJ

Polarity/Channel Type

NPN

Reach Compliance Code

not_compliant

Standard Package Name

Frequency - Transition

Gain Bandwidth Product

100MHz

Number of Terminations

3

Transistor Application

SWITCHING

Minimum DC Current Gain

Pd - Power Dissipation:

Supplier Device Package

DC Current Gain hFE Max:

DC Current Gain-Min (hFE)

Max Operating Temperature

Min Operating Temperature

Collector Current-Max (IC)

Gain Bandwidth Product fT:

Supplier Temperature Grade

Emitter Base Voltage (VEBO)

5V

Emitter- Base Voltage VEBO:

Number of Elements per Chip

Operating Temperature (Max)

Operating Temperature (Min)

Power Dissipation-Max (Abs)

Transistor Element Material

SILICON

Collector Base Voltage (VCBO)

Collector- Base Voltage VCBO:

Collector-Emitter Voltage-Max

Continuous Collector Current:

Maximum DC Collector Current:

Peak Reflow Temperature (Cel)

235

Vce Saturation (Max) @ Ib, Ic

700mV @ 50mA, 500mA

Current - Collector (Ic) (Max)

800mA

Maximum Operating Temperature:

Maximum Power Dissipation (mW)

Minimum Operating Temperature:

DC Collector/Base Gain hfe Min:

Collector Emitter Voltage (VCEO)

700mV

Current - Collector Cutoff (Max)

100nA

Maximum DC Collector Current (A)

Maximum Emitter Base Voltage (V)

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Maximum Collector Base Voltage (V)

Maximum Transition Frequency (MHz)

Collector Emitter Breakdown Voltage

45V

Maximum Operating Temperature (°C)

Minimum Operating Temperature (°C)

Collector- Emitter Voltage VCEO Max:

Time@Peak Reflow Temperature-Max (s)

10

Collector-Emitter Saturation Voltage:

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA 1V

Maximum Collector-Emitter Voltage (V)

Maximum Collector Cut-Off Current (nA)

Maximum Base Emitter Saturation Voltage (V)

Voltage - Collector Emitter Breakdown (Max)

Factory Pack Quantity:Factory Pack Quantity:

Maximum Collector-Emitter Saturation Voltage (V)