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287 In Stock
BC847BV-7
287 In Stock
BC847BV-7
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Manufacturer No:
Diodes Incorporated
Manufacturer:
Diodes Incorporated
Category:
Arrays BJT Transistors
Package:
SOT-563, SOT-666
Datasheet:
Description Differential:
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Type
DESCRIPTION
RoHS
yes
Mount
Surface Mount
Width
1.2mm
Height
600μm
Length
1.6mm
Pbfree
yes
Series
Weight
3.005049mg
Current
Voltage
hFE Min
Polarity
NPN
ECCN Code
EAR99
Frequency
100MHz
Inventory
31300
Lead Free
Lead Free
Packaging
Tape & Reel (TR)
Pin Count
6
Published
2003
REACH SVHC
Part Status
Active
Power - Max
RoHS Status
ROHS3 Compliant
Subcategory
Other Transistors
Termination
JESD-30 Code
Configuration
JESD-609 Code
e3
Mounting Type
Surface Mount
Surface Mount
Terminal Form
FLAT
Current Rating
100mA
Number of Pins
6
Package / Case
SOT-563, SOT-666
Case Connection
Contact Plating
Tin
Terminal Finish
Transistor Type
2 NPN (Dual)
Base Part Number
BC847BV
Lifecycle Status
Factory Lead Time
19 Weeks
Power Dissipation
150mW
Terminal Position
Additional Feature
Number of Elements
2
Reference Standard
Voltage - Rated DC
45V
Radiation Hardening
No
Qualification Status
Transition Frequency
100MHz
Element Configuration
Dual
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Power Dissipation
150mW
Operating Temperature
-55°C~150°CTJ
Polarity/Channel Type
Frequency - Transition
Gain Bandwidth Product
100MHz
Number of Terminations
6
Transistor Application
Emitter Base Voltage (VEBO)
6V
Power Dissipation-Max (Abs)
Transistor Element Material
SILICON
Continuous Collector Current
100mA
Collector Base Voltage (VCBO)
50V
Max Junction Temperature (Tj)
Peak Reflow Temperature (Cel)
260
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 100mA
Current - Collector (Ic) (Max)
Collector Emitter Voltage (VCEO)
45V
Current - Collector Cutoff (Max)
15nA ICBO
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
300mV
Time@Peak Reflow Temperature-Max (s)
40
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Voltage - Collector Emitter Breakdown (Max)
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