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1176 In Stock

BC856AS-7

1176 In Stock

BC856AS-7

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Manufacturer No:

Diodes Incorporated

Manufacturer:

Diodes Incorporated

Category:

Arrays BJT Transistors

Package:

6-TSSOP, SC-88, SOT-363

Description Differential:

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    Type

    DESCRIPTION

    RoHS

    yes

    Mount

    Surface Mount

    Width

    1.35mm

    Height

    1mm

    Length

    2.2mm

    Pbfree

    yes

    Series

    Weight

    6.010099mg

    Current

    Voltage

    hFE Min

    125

    HTS Code

    Polarity

    PNP

    ECCN Code

    EAR99

    Frequency

    100MHz

    Inventory

    64541

    Lead Free

    Lead Free

    Packaging

    Tape & Reel (TR)

    Pin Count

    6

    Published

    2007

    REACH SVHC

    No SVHC

    Part Status

    Active

    Power - Max

    RoHS Status

    ROHS3 Compliant

    Subcategory

    Other Transistors

    Termination

    JESD-30 Code

    Configuration

    JESD-609 Code

    e3

    Mounting Type

    Surface Mount

    Surface Mount

    Terminal Form

    GULL WING

    Current Rating

    Number of Pins

    6

    Package / Case

    6-TSSOP, SC-88, SOT-363

    Case Connection

    Contact Plating

    Tin

    Forward Current

    Forward Voltage

    Terminal Finish

    Transistor Type

    2 PNP (Dual)

    Base Part Number

    BC856AS

    Lifecycle Status

    Factory Lead Time

    15 Weeks

    Power Dissipation

    200mW

    Additional Feature

    Number of Elements

    2

    Reference Standard

    Voltage - Rated DC

    Radiation Hardening

    No

    Qualification Status

    Transition Frequency

    100MHz

    Element Configuration

    Dual

    Max Breakdown Voltage

    65V

    Max Collector Current

    100mA

    Max Power Dissipation

    200mW

    Operating Temperature

    -65°C~150°CTJ

    Polarity/Channel Type

    Frequency - Transition

    Gain Bandwidth Product

    100MHz

    Number of Terminations

    6

    Transistor Application

    SWITCHING

    Supplier Device Package

    Emitter Base Voltage (VEBO)

    5V

    Power Dissipation-Max (Abs)

    Transistor Element Material

    SILICON

    Continuous Collector Current

    Collector Base Voltage (VCBO)

    80V

    Max Junction Temperature (Tj)

    Peak Reflow Temperature (Cel)

    260

    Vce Saturation (Max) @ Ib, Ic

    650mV @ 5mA, 100mA

    Current - Collector (Ic) (Max)

    Collector Emitter Voltage (VCEO)

    65V

    Current - Collector Cutoff (Max)

    15nA

    Max Forward Surge Current (Ifsm)

    Moisture Sensitivity Level (MSL)

    1 (Unlimited)

    Collector Emitter Breakdown Voltage

    65V

    Collector Emitter Saturation Voltage

    -250mV

    Time@Peak Reflow Temperature-Max (s)

    40

    DC Current Gain (hFE) (Min) @ Ic, Vce

    125 @ 2mA 5V

    Max Repetitive Reverse Voltage (Vrrm)

    Voltage - Collector Emitter Breakdown (Max)

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