Mfr

RoHS

yes

Mount

Surface Mount

Width

Height

Length

Pbfree

yes

Series

Weight

Package

hFE Min

220

HTS Code

ECCN Code

EAR99

Frequency

200MHz

Inventory

3231

Lead Free

Packaging

Tape & Reel (TR)

Pin Count

Published

2005

REACH SVHC

No SVHC

VCEsat-Max

Part Status

Active

Power - Max

310mW

RoHS Status

ROHS3 Compliant

Subcategory

Other Transistors

Termination

JESD-30 Code

Configuration

JESD-609 Code

e3

Mounting Type

Surface Mount

Surface Mount

Terminal Form

GULL WING

Current Rating

Number of Pins

3

Package / Case

TO-236-3, SC-59, SOT-23-3

Product Status

Case Connection

Contact Plating

Tin

Terminal Finish

Transistor Type

PNP

Base Part Number

BC856B

Factory Lead Time

19 Weeks

Power Dissipation

350mW

Terminal Position

DUAL

Additional Feature

HIGH RELIABILITY

Number of Elements

1

Reference Standard

Voltage - Rated DC

Radiation Hardening

Qualification Status

Transition Frequency

200MHz

Element Configuration

Single

Max Breakdown Voltage

Max Collector Current

100mA

Max Power Dissipation

350mW

Operating Temperature

-65°C~150°CTJ

Polarity/Channel Type

PNP

Frequency - Transition

Gain Bandwidth Product

200MHz

Number of Terminations

3

Transistor Application

SWITCHING

Supplier Device Package

Emitter Base Voltage (VEBO)

5V

Transistor Element Material

SILICON

Continuous Collector Current

-100mA

Collector Base Voltage (VCBO)

80V

Peak Reflow Temperature (Cel)

260

Vce Saturation (Max) @ Ib, Ic

650mV @ 5mA, 100mA

Collector-Base Capacitance-Max

Current - Collector (Ic) (Max)

Collector Emitter Voltage (VCEO)

65V

Current - Collector Cutoff (Max)

15μA ICBO

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Collector Emitter Breakdown Voltage

65V

Collector Emitter Saturation Voltage

-650mV

Time@Peak Reflow Temperature-Max (s)

NOTSPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce

220 @ 2mA 5V

Voltage - Collector Emitter Breakdown (Max)