RoHS

yes

Mount

Surface Mount

Width

1.4mm

Height

1mm

Length

3.05mm

Pbfree

yes

Weight

7.994566mg

hFE Min

ECCN Code

EAR99

Frequency

200MHz

Inventory

13104

Lead Free

Packaging

Tape & Reel (TR)

Pin Count

3

Published

2003

REACH SVHC

No SVHC

Part Status

Active

Power - Max

300mW

RoHS Status

ROHS3 Compliant

Subcategory

Other Transistors

Termination

JESD-30 Code

Configuration

JESD-609 Code

e3

Max Frequency

Mounting Type

Surface Mount

Surface Mount

Terminal Form

GULL WING

Current Rating

Number of Pins

3

Package / Case

TO-236-3, SC-59, SOT-23-3

Contact Plating

Tin

Terminal Finish

Transistor Type

PNP

Base Part Number

BC858

Factory Lead Time

19 Weeks

Power Dissipation

350mW

Terminal Position

DUAL

Number of Elements

1

Voltage - Rated DC

Radiation Hardening

Qualification Status

Not Qualified

Transition Frequency

200MHz

Element Configuration

Single

Max Breakdown Voltage

Max Collector Current

100mA

Max Power Dissipation

300mW

Operating Temperature

-65°C~150°CTJ

Polarity/Channel Type

PNP

Reach Compliance Code

Frequency - Transition

Gain Bandwidth Product

200MHz

Number of Terminations

3

Transistor Application

SWITCHING

DC Current Gain-Min (hFE)

Collector Current-Max (IC)

Emitter Base Voltage (VEBO)

5V

Operating Temperature (Max)

Power Dissipation-Max (Abs)

Transistor Element Material

SILICON

Collector Base Voltage (VCBO)

30V

Max Junction Temperature (Tj)

Peak Reflow Temperature (Cel)

260

Vce Saturation (Max) @ Ib, Ic

650mV @ 5mA, 100mA

Current - Collector (Ic) (Max)

Collector Emitter Voltage (VCEO)

30V

Current - Collector Cutoff (Max)

15nA

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Collector Emitter Breakdown Voltage

30V

Collector Emitter Saturation Voltage

-650mV

Time@Peak Reflow Temperature-Max (s)

40

DC Current Gain (hFE) (Min) @ Ic, Vce

125 @ 2mA 5V

Voltage - Collector Emitter Breakdown (Max)