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1840 In Stock
BC858C-HF
1840 In Stock
BC858C-HF
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Manufacturer No:
Comchip Technology
Manufacturer:
Comchip Technology
Category:
Single BJT Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
Description Differential:
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Type
DESCRIPTION
RoHS
yes
Mount
Surface Mount
Width
Height
Length
Pbfree
yes
Weight
hFE Min
ECCN Code
Frequency
Inventory
15233
Lead Free
Packaging
Tape & Reel (TR)
Pin Count
Published
2005
REACH SVHC
Part Status
Active
Power - Max
250mW
RoHS Status
ROHS3 Compliant
Subcategory
Termination
JESD-30 Code
Configuration
JESD-609 Code
e3
Max Frequency
Mounting Type
Surface Mount
Surface Mount
Terminal Form
Current Rating
Number of Pins
Package / Case
TO-236-3, SC-59, SOT-23-3
Contact Plating
Terminal Finish
Tin (Sn)
Transistor Type
PNP
Base Part Number
Factory Lead Time
10 Weeks
Power Dissipation
Terminal Position
Number of Elements
Voltage - Rated DC
Radiation Hardening
Qualification Status
Transition Frequency
Element Configuration
Max Breakdown Voltage
Max Collector Current
100mA
Max Power Dissipation
250mW
Operating Temperature
-65°C~150°CTJ
Polarity/Channel Type
Reach Compliance Code
Frequency - Transition
100MHz
Gain Bandwidth Product
Number of Terminations
Transistor Application
DC Current Gain-Min (hFE)
Collector Current-Max (IC)
Emitter Base Voltage (VEBO)
Operating Temperature (Max)
Power Dissipation-Max (Abs)
Transistor Element Material
Collector Base Voltage (VCBO)
Max Junction Temperature (Tj)
Peak Reflow Temperature (Cel)
260
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Current - Collector (Ic) (Max)
Collector Emitter Voltage (VCEO)
650mV
Current - Collector Cutoff (Max)
15nA ICBO
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
Time@Peak Reflow Temperature-Max (s)
30
DC Current Gain (hFE) (Min) @ Ic, Vce
Voltage - Collector Emitter Breakdown (Max)
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