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331 In Stock
BCX5316-13R
331 In Stock
BCX5316-13R
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Manufacturer No:
Diodes Incorporated
Manufacturer:
Diodes Incorporated
Category:
Single BJT Transistors
Package:
Datasheet:
Description Differential:
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Type
DESCRIPTION
Mfr
RoHS
yes
Mount
Surface Mount
Width
Height
Length
Pbfree
yes
Series
Package
hFE Min
HTS Code
Polarity
ECCN Code
EAR99
Frequency
Inventory
33015
Lead Free
Packaging
Tape & Reel (TR)
Pin Count
3
Published
2006
REACH SVHC
Part Status
Active
Power - Max
1W
RoHS Status
ROHS3 Compliant
Subcategory
Other Transistors
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE
JESD-609 Code
e3
Mounting Type
Surface Mount
Surface Mount
Terminal Form
FLAT
Number of Pins
Package / Case
TO-243AA
Product Status
Case Connection
COLLECTOR
Contact Plating
Tin
Terminal Finish
Transistor Type
PNP
Base Part Number
Factory Lead Time
8 Weeks
Power Dissipation
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Radiation Hardening
Qualification Status
Not Qualified
Transition Frequency
150MHz
Element Configuration
Max Breakdown Voltage
80V
Max Collector Current
1A
Max Power Dissipation
1W
Operating Temperature
-65°C~150°CTJ
Polarity/Channel Type
PNP
Frequency - Transition
150MHz
Gain Bandwidth Product
Number of Terminations
3
Transistor Application
SWITCHING
Supplier Device Package
Max Operating Temperature
Min Operating Temperature
Emitter Base Voltage (VEBO)
5V
Transistor Element Material
SILICON
Collector Base Voltage (VCBO)
100V
Max Junction Temperature (Tj)
Peak Reflow Temperature (Cel)
260
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Ambient Temperature Range High
Current - Collector (Ic) (Max)
Collector Emitter Voltage (VCEO)
500mV
Current - Collector Cutoff (Max)
100nA ICBO
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
Time@Peak Reflow Temperature-Max (s)
40
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 2V
Voltage - Collector Emitter Breakdown (Max)
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