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HoT

2348 In Stock

BD249-S

2348 In Stock

BD249-S

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Manufacturer No:

Bourns Inc.

Manufacturer:

Bourns Inc.

Category:

Single BJT Transistors

Package:

TO-218-3

Datasheet:

Description Differential:

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    Type

    DESCRIPTION

    RoHS

    yes

    Mount

    Through Hole

    Width

    Height

    Length

    Pbfree

    Weight

    Current

    Voltage

    hFE Min

    HTS Code

    Polarity

    ECCN Code

    EAR99

    Inventory

    17633

    Lead Free

    Packaging

    Tube

    Pin Count

    3

    Published

    1993

    REACH SVHC

    VCEsat-Max

    Part Status

    Obsolete

    Power - Max

    3W

    RoHS Status

    ROHS3 Compliant

    Subcategory

    Other Transistors

    JESD-30 Code

    Configuration

    JEDEC-95 Code

    JESD-609 Code

    e1

    Max Frequency

    Mounting Type

    Through Hole

    Surface Mount

    Terminal Form

    Current Rating

    Number of Pins

    3

    Package / Case

    TO-218-3

    Case Connection

    COLLECTOR

    Contact Plating

    Terminal Finish

    Tin/Silver/Copper (Sn/Ag/Cu)

    Transistor Type

    NPN

    Base Part Number

    BD249

    Lifecycle Status

    Factory Lead Time

    Power Dissipation

    125W

    Terminal Position

    Additional Feature

    Number of Elements

    1

    Voltage - Rated DC

    Radiation Hardening

    Qualification Status

    Not Qualified

    Transition Frequency

    Element Configuration

    Single

    Max Breakdown Voltage

    Max Collector Current

    25A

    Max Power Dissipation

    3W

    Operating Temperature

    -65°C~150°CTJ

    Polarity/Channel Type

    NPN

    Reach Compliance Code

    not_compliant

    Frequency - Transition

    Gain Bandwidth Product

    Number of Terminations

    3

    Transistor Application

    SWITCHING

    Supplier Device Package

    DC Current Gain-Min (hFE)

    Max Operating Temperature

    Min Operating Temperature

    Collector Current-Max (IC)

    Emitter Base Voltage (VEBO)

    5V

    Transistor Element Material

    SILICON

    Collector Base Voltage (VCBO)

    Collector-Emitter Voltage-Max

    Peak Reflow Temperature (Cel)

    NOTSPECIFIED

    Power Dissipation Ambient-Max

    Vce Saturation (Max) @ Ib, Ic

    4V @ 5A, 25A

    Current - Collector (Ic) (Max)

    Collector Emitter Voltage (VCEO)

    45V

    Current - Collector Cutoff (Max)

    1mA

    Moisture Sensitivity Level (MSL)

    1 (Unlimited)

    Collector Emitter Breakdown Voltage

    45V

    Collector Emitter Saturation Voltage

    Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

    DC Current Gain (hFE) (Min) @ Ic, Vce

    10 @ 15A 4V

    Voltage - Collector Emitter Breakdown (Max)

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