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1577 In Stock
BSS214NWL6327
1577 In Stock
BSS214NWL6327
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Manufacturer No:
Infineon Technologies AG
Manufacturer:
Infineon Technologies AG
Category:
Small Signal Field-Effect Transistors
Package:
Datasheet:
Description Differential:
Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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Type
DESCRIPTION
Objectid
1808846817
ECCN Code
EAR99
Pin Count
3
Risk Rank
9.61
Rohs Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Number of Elements
1
Source Content uid
BSS214NWL6327
Number of Terminals
3
Package Description
SMALL OUTLINE, R-PDSO-G3
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
1.5 A
DS Breakdown Voltage-Min
20 V
Operating Temperature-Max
150°C
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
0.5 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
1.5 A
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.14 Ω
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