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BSS214NWL6327

1577 In Stock

BSS214NWL6327

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Manufacturer No:

Infineon Technologies AG

Manufacturer:

Infineon Technologies AG

Category:

Small Signal Field-Effect Transistors

Package:

Datasheet:

Description Differential:

Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

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    Type

    DESCRIPTION

    Objectid

    1808846817

    ECCN Code

    EAR99

    Pin Count

    3

    Risk Rank

    9.61

    Rohs Code

    Yes

    Subcategory

    FET General Purpose Power

    JESD-30 Code

    R-PDSO-G3

    Configuration

    SINGLE WITH BUILT-IN DIODE

    JESD-609 Code

    e3

    Package Shape

    RECTANGULAR

    Package Style

    SMALL OUTLINE

    Surface Mount

    YES

    Terminal Form

    GULL WING

    FET Technology

    METAL-OXIDE SEMICONDUCTOR

    Operating Mode

    ENHANCEMENT MODE

    Terminal Finish

    MATTE TIN

    Terminal Position

    DUAL

    Additional Feature

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

    Number of Elements

    1

    Source Content uid

    BSS214NWL6327

    Number of Terminals

    3

    Package Description

    SMALL OUTLINE, R-PDSO-G3

    Part Life Cycle Code

    Obsolete

    Qualification Status

    Not Qualified

    Package Body Material

    PLASTIC/EPOXY

    Polarity/Channel Type

    N-CHANNEL

    Reach Compliance Code

    compliant

    Drain Current-Max (ID)

    1.5 A

    DS Breakdown Voltage-Min

    20 V

    Operating Temperature-Max

    150°C

    Moisture Sensitivity Level

    1

    Power Dissipation-Max (Abs)

    0.5 W

    Transistor Element Material

    SILICON

    Drain Current-Max (Abs) (ID)

    1.5 A

    Peak Reflow Temperature (Cel)

    260

    Drain-source On Resistance-Max

    0.14 Ω

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