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3696 In Stock

BST82,235

3696 In Stock

BST82,235

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Manufacturer No:

NXP

Manufacturer:

NXP

Category:

Small Signal Field-Effect Transistors

Package:

Datasheet:

Description Differential:

BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin

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    Type

    DESCRIPTION

    HTS Code

    8541.21.00.95

    ECCN Code

    EAR99

    Pin Count

    3

    Rohs Code

    Yes

    Brand Name

    NXP Semiconductor

    Popularity

    115

    Subcategory

    FET General Purpose Power

    JESD-30 Code

    R-PDSO-G3

    Configuration

    SINGLE WITH BUILT-IN DIODE

    JESD-609 Code

    e3

    Package Shape

    RECTANGULAR

    Package Style

    SMALL OUTLINE

    Surface Mount

    YES

    Terminal Form

    GULL WING

    FET Technology

    METAL-OXIDE SEMICONDUCTOR

    Operating Mode

    ENHANCEMENT MODE

    Terminal Finish

    TIN

    Part Package Code

    TO-236

    Terminal Position

    DUAL

    Number of Elements

    1

    Source Content uid

    BST82,235

    Number of Terminals

    3

    Package Description

    SMALL OUTLINE, R-PDSO-G3

    Part Life Cycle Code

    Transferred

    Qualification Status

    Not Qualified

    Package Body Material

    PLASTIC/EPOXY

    Polarity/Channel Type

    N-CHANNEL

    Reach Compliance Code

    compliant

    Drain Current-Max (ID)

    0.175 A

    Transistor Application

    SWITCHING

    Feedback Cap-Max (Crss)

    6 pF

    DS Breakdown Voltage-Min

    80 V

    Manufacturer Package Code

    SOT23

    Operating Temperature-Max

    150°C

    Moisture Sensitivity Level

    1

    Power Dissipation-Max (Abs)

    0.3 W

    Transistor Element Material

    SILICON

    Drain Current-Max (Abs) (ID)

    0.175 A

    Peak Reflow Temperature (Cel)

    260

    Drain-source On Resistance-Max

    10 Ω

    Time@Peak Reflow Temperature-Max (s)

    30

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