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CJD122TR13

2401 In Stock

CJD122TR13

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Manufacturer No:

Central Semiconductor Corp

Manufacturer:

Central Semiconductor Corp

Category:

Power Bipolar Transistors

Package:

Datasheet:

Description Differential:

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin,

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    Type

    DESCRIPTION

    YTEOL

    0

    HTS Code

    8541.29.00.95

    Objectid

    1466784283

    ECCN Code

    EAR99

    Risk Rank

    8.83

    Rohs Code

    No

    VCEsat-Max

    4 V

    Pbfree Code

    No

    JESD-30 Code

    R-PSSO-G2

    Configuration

    DARLINGTON

    JESD-609 Code

    e0

    Package Shape

    RECTANGULAR

    Package Style

    SMALL OUTLINE

    Surface Mount

    YES

    Terminal Form

    GULL WING

    Case Connection

    COLLECTOR

    Terminal Finish

    TIN LEAD

    Terminal Position

    SINGLE

    Number of Elements

    1

    Number of Terminals

    2

    Part Life Cycle Code

    Obsolete

    Qualification Status

    Not Qualified

    Package Body Material

    PLASTIC/EPOXY

    Polarity/Channel Type

    NPN

    Reach Compliance Code

    not_compliant

    Transistor Application

    SWITCHING

    DC Current Gain-Min (hFE)

    100

    Operating Temperature-Max

    150°C

    Collector Current-Max (IC)

    8 A

    Power Dissipation-Max (Abs)

    20 W

    Transistor Element Material

    SILICON

    Collector-Emitter Voltage-Max

    100 V

    Power Dissipation Ambient-Max

    20 W

    Transition Frequency-Nom (fT)

    4 MHz

    Collector-Base Capacitance-Max

    200 pF

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