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CJD122TR13
2401 In Stock
CJD122TR13
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Manufacturer No:
Central Semiconductor Corp
Manufacturer:
Central Semiconductor Corp
Category:
Power Bipolar Transistors
Package:
Datasheet:
Description Differential:
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin,
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Type
DESCRIPTION
YTEOL
0
HTS Code
8541.29.00.95
Objectid
1466784283
ECCN Code
EAR99
Risk Rank
8.83
Rohs Code
No
VCEsat-Max
4 V
Pbfree Code
No
JESD-30 Code
R-PSSO-G2
Configuration
DARLINGTON
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
not_compliant
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
100
Operating Temperature-Max
150°C
Collector Current-Max (IC)
8 A
Power Dissipation-Max (Abs)
20 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
100 V
Power Dissipation Ambient-Max
20 W
Transition Frequency-Nom (fT)
4 MHz
Collector-Base Capacitance-Max
200 pF
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