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3134 In Stock
DDTA122TE-7-F
3134 In Stock
DDTA122TE-7-F
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Manufacturer No:
Diodes Incorporated
Manufacturer:
Diodes Incorporated
Category:
Pre-Biased BJT Transistors
Package:
SOT-523
Datasheet:
Description Differential:
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Type
DESCRIPTION
RoHS
yes
Mount
Surface Mount
Width
800μm
Height
750μm
Length
1.6mm
Pbfree
yes
Weight
2.012816mg
hFE Min
100
HTS Code
Polarity
PNP
ECCN Code
EAR99
Inventory
14902
Lead Free
Lead Free
Packaging
Tape & Reel (TR)
Pin Count
3
Published
2007
REACH SVHC
Part Status
Active
Power - Max
RoHS Status
ROHS3 Compliant
Subcategory
BIP General Purpose Small Signal
JESD-30 Code
Configuration
JESD-609 Code
e3
Mounting Type
Surface Mount
Terminal Form
GULL WING
Current Rating
-100mA
Number of Pins
3
Package / Case
SOT-523
Case Connection
Terminal Finish
Matte Tin (Sn)
Transistor Type
Base Part Number
Factory Lead Time
Power Dissipation
Terminal Position
DUAL
Additional Feature
BUILT IN BIAS RESISTOR
Number of Elements
1
Voltage - Rated DC
-50V
Radiation Hardening
Qualification Status
Not Qualified
Resistor - Base (R1)
Transition Frequency
200MHz
Element Configuration
Single
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Power Dissipation
150mW
Polarity/Channel Type
Reach Compliance Code
Frequency - Transition
Number of Terminations
3
DC Current Gain-Min (hFE)
100
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Emitter Base Voltage (VEBO)
Transistor Element Material
Continuous Collector Current
100mA
Resistor - Emitter Base (R2)
Peak Reflow Temperature (Cel)
260
Vce Saturation (Max) @ Ib, Ic
Current - Collector (Ic) (Max)
Collector Emitter Voltage (VCEO)
40V
Current - Collector Cutoff (Max)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
50V
Time@Peak Reflow Temperature-Max (s)
40
DC Current Gain (hFE) (Min) @ Ic, Vce
Voltage - Collector Emitter Breakdown (Max)
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