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2330 In Stock

DDTA123EKA-7-F

2330 In Stock

DDTA123EKA-7-F

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Manufacturer No:

Diodes Incorporated

Manufacturer:

Diodes Incorporated

Category:

Pre-Biased BJT Transistors

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

Description Differential:

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    Type

    DESCRIPTION

    RoHS

    yes

    Mount

    Surface Mount

    Width

    1.7mm

    Height

    1.3mm

    Length

    3.1mm

    Pbfree

    yes

    Weight

    7.994566mg

    hFE Min

    20

    HTS Code

    8541.21.00.75

    Polarity

    PNP

    ECCN Code

    EAR99

    Inventory

    1086

    Lead Free

    Packaging

    Tape & Reel (TR)

    Pin Count

    3

    Published

    2007

    Part Status

    Obsolete

    Power - Max

    RoHS Status

    ROHS3 Compliant

    Subcategory

    BIP General Purpose Small Signal

    JESD-30 Code

    R-PDSO-G3

    Configuration

    JESD-609 Code

    e3

    Mounting Type

    Surface Mount

    Surface Mount

    Terminal Form

    GULL WING

    Current Rating

    Number of Pins

    59

    Package / Case

    TO-236-3, SC-59, SOT-23-3

    Terminal Finish

    Matte Tin (Sn)

    Transistor Type

    PNP - Pre-Biased

    Base Part Number

    DDTA123

    Factory Lead Time

    Terminal Position

    DUAL

    Additional Feature

    BUILT IN BIAS RESISTOR RATIO IS 1

    Max Output Current

    Number of Elements

    1

    Voltage - Rated DC

    Radiation Hardening

    No

    Qualification Status

    Resistor - Base (R1)

    2.2 k Ω

    Transition Frequency

    250MHz

    Element Configuration

    Single

    Max Breakdown Voltage

    Max Collector Current

    100mA

    Max Power Dissipation

    200mW

    Polarity/Channel Type

    Frequency - Transition

    250MHz

    Number of Terminations

    3

    Supplier Device Package

    Operating Supply Voltage

    DC Current Gain-Min (hFE)

    Max Operating Temperature

    150°C

    Min Operating Temperature

    -55°C

    Emitter Base Voltage (VEBO)

    Operating Temperature (Max)

    Power Dissipation-Max (Abs)

    Transistor Element Material

    Continuous Collector Current

    100mA

    Resistor - Emitter Base (R2)

    2.2 k Ω

    Peak Reflow Temperature (Cel)

    260

    Vce Saturation (Max) @ Ib, Ic

    300mV @ 500μA, 10mA

    Current - Collector (Ic) (Max)

    Collector Emitter Voltage (VCEO)

    300mV

    Current - Collector Cutoff (Max)

    500nA

    Moisture Sensitivity Level (MSL)

    1 (Unlimited)

    Collector Emitter Breakdown Voltage

    50V

    Time@Peak Reflow Temperature-Max (s)

    40

    DC Current Gain (hFE) (Min) @ Ic, Vce

    20 @ 20mA 5V

    Voltage - Collector Emitter Breakdown (Max)

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