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1129 In Stock

LF157N

1129 In Stock

LF157N

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Manufacturer No:

STMicroelectronics

Manufacturer:

STMicroelectronics

Category:

Operational Amplifiers

Package:

PLASTIC, DIP-8

Datasheet:

Description Differential:

OP-AMP, 7000uV OFFSET-MAX, 20MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8

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    Type

    DESCRIPTION

    YTEOL

    0

    HTS Code

    8542.33.00.01

    Low-Bias

    YES

    Objectid

    1438416528

    ECCN Code

    EAR99

    Pin Count

    8

    Risk Rank

    9.66

    Rohs Code

    No

    Low-Offset

    NO

    Technology

    BIPOLAR

    Architecture

    VOLTAGE-FEEDBACK

    JESD-30 Code

    R-PDIP-T8

    Package Code

    DIP

    JESD-609 Code

    e0

    Package Shape

    RECTANGULAR

    Package Style

    IN-LINE

    Slew Rate-Min

    30 V/us

    Slew Rate-Nom

    50 V/us

    Surface Mount

    NO

    Terminal Form

    THROUGH-HOLE

    Amplifier Type

    OPERATIONAL AMPLIFIER

    Terminal Pitch

    2.54 mm

    Terminal Finish

    TIN LEAD

    Voltage Gain-Min

    25000

    Part Package Code

    DIP

    Temperature Grade

    MILITARY

    Terminal Position

    DUAL

    Unity Gain BW-Nom

    20000 kHz

    Source Content uid

    LF157N

    Supply Current-Max

    7 mA

    Number of Functions

    1

    Number of Terminals

    8

    Package Description

    PLASTIC, DIP-8

    Part Life Cycle Code

    Obsolete

    Qualification Status

    Not Qualified

    Package Body Material

    PLASTIC/EPOXY

    Reach Compliance Code

    not_compliant

    Frequency Compensation

    YES (AVCL>=5)

    Input Offset Voltage-Max

    7000 µV

    Package Equivalence Code

    DIP8,.3

    Supply Voltage Limit-Max

    22 V

    Operating Temperature-Max

    125°C

    Operating Temperature-Min

    -55°C

    Supply Voltage-Nom (Vsup)

    20 V

    Bias Current-Max (IIB) @25C

    0.0001 µA

    Common-mode Reject Ratio-Nom

    100 dB

    Neg Supply Voltage Limit-Max

    -22 V

    Neg Supply Voltage-Nom (Vsup)

    -20 V

    Average Bias Current-Max (IIB)

    0.05 µA

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