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3311 In Stock

LM308AN/A+

3311 In Stock

LM308AN/A+

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Manufacturer No:

National Semiconductor Corporation

Manufacturer:

National Semiconductor Corporation

Category:

Operational Amplifiers

Package:

DIP

Description Differential:

IC OP-AMP, 730 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8, Operational Amplifier

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    Type

    DESCRIPTION

    Power

    NO

    Width

    7.62 mm

    Length

    9.817 mm

    HTS Code

    8542.33.00.01

    Low-Bias

    NO

    Wideband

    NO

    ECCN Code

    EAR99

    Pin Count

    8

    Rohs Code

    No

    Low-Offset

    YES

    Micropower

    YES

    Popularity

    0

    Technology

    BIPOLAR

    Subcategory

    Operational Amplifier

    Architecture

    VOLTAGE-FEEDBACK

    JESD-30 Code

    R-PDIP-T8

    Package Code

    DIP

    JESD-609 Code

    e0

    Package Shape

    RECTANGULAR

    Package Style

    IN-LINE

    Surface Mount

    NO

    Terminal Form

    THROUGH-HOLE

    Amplifier Type

    OPERATIONAL AMPLIFIER

    Power Supplies

    +-5/+-20 V

    Terminal Pitch

    2.54 mm

    Terminal Finish

    TIN LEAD

    Part Package Code

    DIP

    Seated Height-Max

    5.08 mm

    Temperature Grade

    COMMERCIAL

    Terminal Position

    DUAL

    Unity Gain BW-Nom

    1000 kHz

    Programmable Power

    NO

    Source Content uid

    LM308AN/A+

    Supply Current-Max

    0.8 mA

    Number of Functions

    1

    Number of Terminals

    8

    Package Description

    DIP, DIP8,.3

    Part Life Cycle Code

    Obsolete

    Qualification Status

    Not Qualified

    Package Body Material

    PLASTIC/EPOXY

    Reach Compliance Code

    unknown

    Frequency Compensation

    NO

    Input Offset Voltage-Max

    730 µV

    Package Equivalence Code

    DIP8,.3

    Operating Temperature-Max

    70°C

    Operating Temperature-Min

    0°C

    Supply Voltage-Nom (Vsup)

    15 V

    Common-mode Reject Ratio-Nom

    110 dB

    Neg Supply Voltage-Nom (Vsup)

    -15 V

    Average Bias Current-Max (IIB)

    0.01 µA

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