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745 In Stock
MDS3652URH
745 In Stock
MDS3652URH
$3.0121
Manufacturer No:
MagnaChip Semiconductor
Manufacturer:
MagnaChip Semiconductor
Category:
MOSFETs
Package:
SOIC
Datasheet:
Description Differential:
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
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Type
DESCRIPTION
HTS
8541.29.00.95
PPAP
Unknown
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
8
Automotive
Unknown
Lead Shape
Gull-wing
PCB changed
8
Part Status
Active
Channel Mode
Enhancement
Channel Type
P
Configuration
Single Quad Drain Triple Source
Package Width
3.9
Package Height
1.5(Max)
Package Length
4.9
Supplier Package
SOIC
Maximum IDSS (uA)
1
Process Technology
TMOS
Standard Package Name
SO
Typical Fall Time (ns)
17.4
Typical Rise Time (ns)
26.8
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
3100
Typical Gate Charge @ 10V (nC)
35
Typical Gate Charge @ Vgs (nC)
35@10V
Maximum Gate Source Voltage (V)
±20
Typical Turn-On Delay Time (ns)
13
Maximum Drain Source Voltage (V)
30
Typical Turn-Off Delay Time (ns)
34.4
Maximum Gate Threshold Voltage (V)
3
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
11
Typical Input Capacitance @ Vds (pF)
1770@15V
Maximum Drain Source Resistance (mOhm)
17@10V
Maximum Gate Source Leakage Current (nA)
100
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