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MMBR5031LT1
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MMBR5031LT1
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Manufacturer No:
NXP Semiconductors
Manufacturer:
NXP Semiconductors
Category:
RF BJT
Package:
SOT-23
Datasheet:
Description Differential:
Trans RF BJT NPN 10V 0.02A 3-Pin SOT-23 T/R
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Type
DESCRIPTION
PPAP
No
Type
NPN
Material
Si
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
3
Automotive
No
Lead Shape
Gull-wing
PCB changed
3
Part Status
Obsolete
Configuration
Single
Package Width
1.3
Package Height
0.94
Package Length
2.9
Supplier Package
SOT-23
Standard Package Name
SOT
Minimum DC Current Gain
25@1mA@6V
Typical Power Gain (dB)
17
Maximum Noise Figure (dB)
2.5(Typ)
Number of Elements per Chip
1
Operational Bias Conditions
6V/1mA
Minimum DC Current Gain Range
2 to 30
Maximum Power Dissipation (mW)
300
Typical Output Capacitance (pF)
1.5(Max)
Maximum DC Collector Current (A)
0.02
Maximum Emitter Base Voltage (V)
3
Maximum Collector Base Voltage (V)
15
Maximum Transition Frequency (MHz)
1000(Typ)
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Collector-Emitter Voltage (V)
10
Maximum Collector Cut-Off Current (nA)
10
Maximum DC Collector Current Range (A)
0.001 to 0.06
Maximum Junction Case Thermal Resistance
250°C/W
Maximum Collector-Emitter Voltage Range (V)
&l;20
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