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3370 In Stock

MMBT3906-13

3370 In Stock

MMBT3906-13

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Manufacturer No:

Diodes Incorporated

Manufacturer:

Diodes Incorporated

Category:

Single BJT Transistors

Package:

TO-236-3, SC-59, SOT-23-3

Description Differential:

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Substitutes
Small Signal Bipolar Transistor,

MMBT3906Q-13-F

Diodes Incorporated

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Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

CMPT3906TR13LEADFREE

Central Semiconductor Corp

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Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,

MMBT3906T-13-F

Diodes Incorporated

Pin To Pin

Inquire now

    Type

    DESCRIPTION

    RoHS

    Mount

    Width

    Height

    Length

    Pbfree

    no

    Series

    Automotive, AEC-Q101

    Weight

    hFE Min

    HTS Code

    ECCN Code

    EAR99

    Inventory

    6369

    Lead Free

    Packaging

    Tape & Reel (TR)

    Pin Count

    3

    Published

    REACH SVHC

    Part Status

    Obsolete

    Power - Max

    310mW

    RoHS Status

    Non-RoHS Compliant

    Subcategory

    Termination

    Halogen Free

    JESD-30 Code

    R-PDSO-G3

    Configuration

    SINGLE

    JESD-609 Code

    e0

    Mounting Type

    Surface Mount

    Surface Mount

    YES

    Terminal Form

    GULL WING

    Current Rating

    Number of Pins

    Package / Case

    TO-236-3, SC-59, SOT-23-3

    Case Connection

    Contact Plating

    Terminal Finish

    TIN LEAD

    Transistor Type

    PNP

    Base Part Number

    Lifecycle Status

    Factory Lead Time

    Power Dissipation

    Terminal Position

    DUAL

    Number of Elements

    1

    Voltage - Rated DC

    Radiation Hardening

    Qualification Status

    Not Qualified

    Transition Frequency

    250MHz

    Element Configuration

    Max Breakdown Voltage

    Max Collector Current

    Max Power Dissipation

    Operating Temperature

    -55°C~150°CTJ

    Polarity/Channel Type

    PNP

    Reach Compliance Code

    compliant

    Frequency - Transition

    250MHz

    Number of Terminations

    3

    Transistor Application

    SWITCHING

    Turn On Time-Max (ton)

    70ns

    Supplier Device Package

    Turn Off Time-Max (toff)

    300ns

    Emitter Base Voltage (VEBO)

    Transistor Element Material

    SILICON

    Collector Base Voltage (VCBO)

    Peak Reflow Temperature (Cel)

    235

    Vce Saturation (Max) @ Ib, Ic

    400mV @ 5mA, 50mA

    Current - Collector (Ic) (Max)

    200mA

    Collector Emitter Voltage (VCEO)

    Current - Collector Cutoff (Max)

    50nA

    Moisture Sensitivity Level (MSL)

    1 (Unlimited)

    Collector Emitter Breakdown Voltage

    Collector Emitter Saturation Voltage

    Time@Peak Reflow Temperature-Max (s)

    10

    DC Current Gain (hFE) (Min) @ Ic, Vce

    100 @ 10mA 1V

    Voltage - Collector Emitter Breakdown (Max)

    40V

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