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MMBTA14-7

2025 In Stock

MMBTA14-7

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Manufacturer No:

Diodes Incorporated

Manufacturer:

Diodes Incorporated

Category:

Single BJT Transistors

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

Description Differential:

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    Type

    DESCRIPTION

    HTS

    PPAP

    RoHS

    Type

    Mount

    Surface Mount

    Width

    Height

    Length

    Pbfree

    Series

    Automotive, AEC-Q101

    Weight

    EU RoHS

    hFE Min

    Category

    HTS Code

    Material

    Mounting

    Polarity

    NPN

    ECCN (US)

    ECCN Code

    EAR99

    Frequency

    Inventory

    14080

    Lead Free

    Contains Lead

    Packaging

    Cut Tape (CT)

    Pin Count

    3

    Published

    2005

    Automotive

    Lead Shape

    REACH SVHC

    VCEsat-Max

    PCB changed

    Part Status

    Discontinued

    Power - Max

    RoHS Status

    Non-RoHS Compliant

    Subcategory

    Other Transistors

    Termination

    JESD-30 Code

    Configuration

    JESD-609 Code

    e0

    Max Frequency

    Mounting Type

    Surface Mount

    Package Width

    Surface Mount

    Terminal Form

    GULL WING

    Current Rating

    100mA

    Number of Pins

    3

    Package / Case

    TO-236-3, SC-59, SOT-23-3

    Package Length

    Case Connection

    Contact Plating

    Terminal Finish

    Transistor Type

    NPN - Darlington

    Base Part Number

    MMBTA14

    Lifecycle Status

    Supplier Package

    Factory Lead Time

    Power Dissipation

    300mW

    Terminal Position

    DUAL

    Additional Feature

    Number of Elements

    1

    Voltage - Rated DC

    30V

    Radiation Hardening

    Qualification Status

    Not Qualified

    Transition Frequency

    125MHz

    Element Configuration

    Single

    Max Breakdown Voltage

    30V

    Max Collector Current

    300mA

    Max Power Dissipation

    300mW

    Operating Temperature

    -55°C~150°CTJ

    Polarity/Channel Type

    Reach Compliance Code

    not_compliant

    Standard Package Name

    Frequency - Transition

    125MHz

    Gain Bandwidth Product

    Number of Terminations

    3

    Transistor Application

    SWITCHING

    Minimum DC Current Gain

    Supplier Temperature Grade

    Emitter Base Voltage (VEBO)

    10V

    Number of Elements per Chip

    Power Dissipation-Max (Abs)

    Transistor Element Material

    SILICON

    Continuous Collector Current

    300mA

    Collector Base Voltage (VCBO)

    30V

    Peak Reflow Temperature (Cel)

    235

    Vce Saturation (Max) @ Ib, Ic

    1.5V @ 100μA, 100mA

    Current - Collector (Ic) (Max)

    Maximum Power Dissipation (mW)

    Collector Emitter Voltage (VCEO)

    30V

    Current - Collector Cutoff (Max)

    100nA ICBO

    Maximum DC Collector Current (A)

    Maximum Emitter Base Voltage (V)

    Moisture Sensitivity Level (MSL)

    1 (Unlimited)

    Maximum Collector Base Voltage (V)

    Maximum Transition Frequency (MHz)

    Collector Emitter Breakdown Voltage

    30V

    Maximum Operating Temperature (°C)

    Minimum Operating Temperature (°C)

    Collector Emitter Saturation Voltage

    1.5V

    Time@Peak Reflow Temperature-Max (s)

    10

    DC Current Gain (hFE) (Min) @ Ic, Vce

    20000 @ 100mA 5V

    Maximum Collector-Emitter Voltage (V)

    Maximum Collector Cut-Off Current (nA)

    Maximum Base Emitter Saturation Voltage (V)

    Voltage - Collector Emitter Breakdown (Max)

    Maximum Collector-Emitter Saturation Voltage (V)

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