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NE851M13-T3-A

123 In Stock

NE851M13-T3-A

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Manufacturer No:

California Eastern Laboratories

Manufacturer:

California Eastern Laboratories

Category:

RF BJT

Package:

Case 13

Datasheet:

Description Differential:

Trans RF BJT NPN 5.5V 0.1A 140mW 3-Pin Case 13 T/R

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    Type

    DESCRIPTION

    PPAP

    No

    Type

    NPN

    Material

    Si

    Mounting

    Surface Mount

    ECCN (US)

    EAR99

    Packaging

    Tape and Reel

    Pin Count

    3

    Automotive

    No

    PCB changed

    3

    Part Status

    Obsolete

    Configuration

    Single

    Package Width

    0.5

    Package Height

    0.5

    Package Length

    1

    Supplier Package

    Case 13

    Minimum DC Current Gain

    100@5mA@1V

    Typical Power Gain (dB)

    5.5

    Maximum Noise Figure (dB)

    2.5

    Number of Elements per Chip

    1

    Operational Bias Conditions

    1V/5mA

    Maximum Power Dissipation (mW)

    140

    Maximum DC Collector Current (A)

    0.1

    Maximum Emitter Base Voltage (V)

    1.5

    Maximum Collector Base Voltage (V)

    9

    Maximum Transition Frequency (MHz)

    6500(Typ)

    Maximum Operating Temperature (°C)

    150

    Minimum Operating Temperature (°C)

    -65

    Maximum Emitter Cut-Off Current (nA)

    600

    Maximum Collector-Emitter Voltage (V)

    5.5

    Maximum Collector Cut-Off Current (nA)

    600

    Maximum DC Collector Current Range (A)

    0.06 to 0.12

    Maximum Collector-Emitter Voltage Range (V)

    &l;20

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