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HoT

2012 In Stock

PDTA123TK,115

2012 In Stock

PDTA123TK,115

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Manufacturer No:

NXP USA Inc.

Manufacturer:

NXP USA Inc.

Category:

Pre-Biased BJT Transistors

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

Description Differential:

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    Type

    DESCRIPTION

    RoHS

    yes

    Mount

    Width

    Height

    Length

    hFE Min

    HTS Code

    Polarity

    ECCN Code

    Inventory

    1072

    Lead Free

    Packaging

    Tape & Reel (TR)

    Pin Count

    Published

    2009

    Part Status

    Obsolete

    Power - Max

    250mW

    RoHS Status

    ROHS3 Compliant

    Subcategory

    JESD-30 Code

    JESD-609 Code

    Mounting Type

    Surface Mount

    Terminal Form

    Current Rating

    Number of Pins

    Package / Case

    TO-236-3, SC-59, SOT-23-3

    Terminal Finish

    Transistor Type

    PNP - Pre-Biased

    Base Part Number

    PDTA123

    Factory Lead Time

    Power Dissipation

    Terminal Position

    Additional Feature

    Number of Elements

    Voltage - Rated DC

    Qualification Status

    Resistor - Base (R1)

    2.2 kOhms

    Element Configuration

    Max Breakdown Voltage

    Max Collector Current

    Max Power Dissipation

    Reach Compliance Code

    Number of Terminations

    Transistor Application

    Supplier Device Package

    SMT3; MPAK

    Max Operating Temperature

    Min Operating Temperature

    Transistor Element Material

    Continuous Collector Current

    Resistor - Emitter Base (R2)

    Peak Reflow Temperature (Cel)

    Vce Saturation (Max) @ Ib, Ic

    150mV @ 500μA, 10mA

    Current - Collector (Ic) (Max)

    100mA

    Collector Emitter Voltage (VCEO)

    Current - Collector Cutoff (Max)

    1μA

    Moisture Sensitivity Level (MSL)

    1 (Unlimited)

    Collector Emitter Breakdown Voltage

    Collector Emitter Saturation Voltage

    Time@Peak Reflow Temperature-Max (s)

    DC Current Gain (hFE) (Min) @ Ic, Vce

    30 @ 20mA 5V

    Voltage - Collector Emitter Breakdown (Max)

    50V

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