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RN2105MFV

2675 In Stock

RN2105MFV

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Manufacturer No:

Toshiba America Electronic Components

Manufacturer:

Toshiba America Electronic Components

Category:

Small Signal Bipolar Transistors

Package:

SMALL OUTLINE, R-PDSO-F3

Datasheet:

Description Differential:

TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ULTRA SMALL, VESM, 2-1L1A, 3 PIN, BIP General Purpose Small Signal

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    Type

    DESCRIPTION

    YTEOL

    7

    Objectid

    2056189502

    ECCN Code

    EAR99

    Pin Count

    3

    Risk Rank

    7.27

    Rohs Code

    Yes

    Pbfree Code

    Yes

    JESD-30 Code

    R-PDSO-F3

    Configuration

    SINGLE WITH BUILT-IN RESISTOR

    Package Shape

    RECTANGULAR

    Package Style

    SMALL OUTLINE

    Surface Mount

    YES

    Terminal Form

    FLAT

    Terminal Position

    DUAL

    Additional Feature

    BUILT-IN BIAS RESISTOR RATIO IS 21.36

    Number of Elements

    1

    Source Content uid

    RN2105MFV

    Number of Terminals

    3

    Package Description

    SMALL OUTLINE, R-PDSO-F3

    Part Life Cycle Code

    Active

    Qualification Status

    Not Qualified

    Samacsys Description

    PNP Bias Resistor Built-in Transistors (BRT), 2.2 kΩ/47 kΩ, SOT-723(VESM)

    Samacsys Modified On

    2024-07-23 09:20:36

    Package Body Material

    PLASTIC/EPOXY

    Polarity/Channel Type

    PNP

    Reach Compliance Code

    unknown

    Samacsys Manufacturer

    Toshiba

    Transistor Application

    SWITCHING

    DC Current Gain-Min (hFE)

    80

    Operating Temperature-Max

    150°C

    Collector Current-Max (IC)

    0.1 A

    Power Dissipation-Max (Abs)

    0.15 W

    Transistor Element Material

    SILICON

    Collector-Emitter Voltage-Max

    50 V

    Peak Reflow Temperature (Cel)

    NOTSPECIFIED

    Transition Frequency-Nom (fT)

    250 MHz

    Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

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