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RN2105MFV
2675 In Stock
RN2105MFV
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Manufacturer No:
Toshiba America Electronic Components
Manufacturer:
Toshiba America Electronic Components
Category:
Small Signal Bipolar Transistors
Package:
SMALL OUTLINE, R-PDSO-F3
Datasheet:
Description Differential:
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ULTRA SMALL, VESM, 2-1L1A, 3 PIN, BIP General Purpose Small Signal
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Type
DESCRIPTION
YTEOL
7
Objectid
2056189502
ECCN Code
EAR99
Pin Count
3
Risk Rank
7.27
Rohs Code
Yes
Pbfree Code
Yes
JESD-30 Code
R-PDSO-F3
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 21.36
Number of Elements
1
Source Content uid
RN2105MFV
Number of Terminals
3
Package Description
SMALL OUTLINE, R-PDSO-F3
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Samacsys Description
PNP Bias Resistor Built-in Transistors (BRT), 2.2 kΩ/47 kΩ, SOT-723(VESM)
Samacsys Modified On
2024-07-23 09:20:36
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Reach Compliance Code
unknown
Samacsys Manufacturer
Toshiba
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
80
Operating Temperature-Max
150°C
Collector Current-Max (IC)
0.1 A
Power Dissipation-Max (Abs)
0.15 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
50 V
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Transition Frequency-Nom (fT)
250 MHz
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
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