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1673 In Stock

RN4988FE

1673 In Stock

RN4988FE

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Manufacturer No:

Toshiba America Electronic Components

Manufacturer:

Toshiba America Electronic Components

Category:

Small Signal Bipolar Transistors

Package:

SMALL OUTLINE, R-PDSO-F6

Datasheet:

Description Differential:

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, EXTREME SUPERMINI PACKAGE-6, BIP General Purpose Small Signal

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Substitutes
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon,

EMD22FHAT2R

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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR

RN4988FE(TPL3)

Toshiba America Electronic Components

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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR

RN4987FE(TPL3)

Toshiba America Electronic Components

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    Type

    DESCRIPTION

    YTEOL

    7

    Objectid

    1535781802

    ECCN Code

    EAR99

    Pin Count

    6

    Risk Rank

    7.32

    Rohs Code

    Yes

    JESD-30 Code

    R-PDSO-F6

    Configuration

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

    Package Shape

    RECTANGULAR

    Package Style

    SMALL OUTLINE

    Surface Mount

    YES

    Terminal Form

    FLAT

    Terminal Position

    DUAL

    Additional Feature

    BUILT-IN BIAS RESISTOR RATIO IS 2.14

    Number of Elements

    2

    Source Content uid

    RN4988FE

    Number of Terminals

    6

    Package Description

    SMALL OUTLINE, R-PDSO-F6

    Part Life Cycle Code

    Active

    Qualification Status

    Not Qualified

    Samacsys Description

    NPN + PNP Bias Resistor Built-in Transistors (BRT), 22 kΩ/47 kΩ, SOT-563(ES6)

    Samacsys Modified On

    2024-07-23 09:20:36

    Package Body Material

    PLASTIC/EPOXY

    Polarity/Channel Type

    NPN AND PNP

    Reach Compliance Code

    unknown

    Samacsys Manufacturer

    Toshiba

    Transistor Application

    SWITCHING

    DC Current Gain-Min (hFE)

    80

    Operating Temperature-Max

    150°C

    Collector Current-Max (IC)

    0.1 A

    Power Dissipation-Max (Abs)

    0.1 W

    Transistor Element Material

    SILICON

    Collector-Emitter Voltage-Max

    50 V

    Peak Reflow Temperature (Cel)

    NOTSPECIFIED

    Transition Frequency-Nom (fT)

    250 MHz

    Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

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