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SI6410DQ-E3
2879 In Stock
SI6410DQ-E3
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Manufacturer No:
Vishay Intertechnologies
Manufacturer:
Vishay Intertechnologies
Category:
Power Field-Effect Transistors
Package:
Datasheet:
Description Differential:
TRANSISTOR 7.8 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TSSOP-8, FET General Purpose Power
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Type
DESCRIPTION
Objectid
2046614299
ECCN Code
EAR99
Pin Count
8
Risk Rank
9.15
Rohs Code
Yes
Pbfree Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
Part Package Code
TSSOP
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Description
SMALL OUTLINE, R-PDSO-G8
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
unknown
Drain Current-Max (ID)
7.8 A
DS Breakdown Voltage-Min
30 V
Operating Temperature-Max
150°C
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
1.5 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
7.8 A
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.014 Ω
Pulsed Drain Current-Max (IDM)
30 A
Time@Peak Reflow Temperature-Max (s)
30
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