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STB120NF10
1199 In Stock
STB120NF10
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Manufacturer No:
STMicroelectronics
Manufacturer:
STMicroelectronics
Category:
Power Field-Effect Transistors
Package:
Datasheet:
Description Differential:
110A, 100V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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Type
DESCRIPTION
ECCN Code
EAR99
Pin Count
4
Rohs Code
Yes
Popularity
1336
Pbfree Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - annealed
Part Package Code
D2PAK
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Source Content uid
STB120NF10
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
not_compliant
Drain Current-Max (ID)
110 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
100 V
Operating Temperature-Max
175°C
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
312 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
120 A
Avalanche Energy Rating (Eas)
550 mJ
Peak Reflow Temperature (Cel)
245
Drain-source On Resistance-Max
0.0105 Ω
Pulsed Drain Current-Max (IDM)
440 A
Time@Peak Reflow Temperature-Max (s)
30
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