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STB120NF10

1199 In Stock

STB120NF10

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Manufacturer No:

STMicroelectronics

Manufacturer:

STMicroelectronics

Category:

Power Field-Effect Transistors

Package:

Datasheet:

Description Differential:

110A, 100V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3

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    Type

    DESCRIPTION

    ECCN Code

    EAR99

    Pin Count

    4

    Rohs Code

    Yes

    Popularity

    1336

    Pbfree Code

    Yes

    Subcategory

    FET General Purpose Power

    JESD-30 Code

    R-PSSO-G2

    Configuration

    SINGLE WITH BUILT-IN DIODE

    JEDEC-95 Code

    TO-263AB

    JESD-609 Code

    e3

    Package Shape

    RECTANGULAR

    Package Style

    SMALL OUTLINE

    Surface Mount

    YES

    Terminal Form

    GULL WING

    FET Technology

    METAL-OXIDE SEMICONDUCTOR

    Operating Mode

    ENHANCEMENT MODE

    Case Connection

    DRAIN

    Terminal Finish

    Matte Tin (Sn) - annealed

    Part Package Code

    D2PAK

    Terminal Position

    SINGLE

    Additional Feature

    AVALANCHE RATED

    Number of Elements

    1

    Source Content uid

    STB120NF10

    Number of Terminals

    2

    Package Description

    SMALL OUTLINE, R-PSSO-G2

    Part Life Cycle Code

    Active

    Qualification Status

    Not Qualified

    Package Body Material

    PLASTIC/EPOXY

    Polarity/Channel Type

    N-CHANNEL

    Reach Compliance Code

    not_compliant

    Drain Current-Max (ID)

    110 A

    Transistor Application

    SWITCHING

    DS Breakdown Voltage-Min

    100 V

    Operating Temperature-Max

    175°C

    Moisture Sensitivity Level

    1

    Power Dissipation-Max (Abs)

    312 W

    Transistor Element Material

    SILICON

    Drain Current-Max (Abs) (ID)

    120 A

    Avalanche Energy Rating (Eas)

    550 mJ

    Peak Reflow Temperature (Cel)

    245

    Drain-source On Resistance-Max

    0.0105 Ω

    Pulsed Drain Current-Max (IDM)

    440 A

    Time@Peak Reflow Temperature-Max (s)

    30

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