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UT2304L-AE2-R

713 In Stock

UT2304L-AE2-R

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Manufacturer No:

Unisonic Technologies Co Ltd

Manufacturer:

Unisonic Technologies Co Ltd

Category:

Power Field-Effect Transistors

Package:

Datasheet:

Description Differential:

Power Field-Effect Transistor, 2.5A I(D), 30V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3

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    Type

    DESCRIPTION

    YTEOL

    5.17

    HTS Code

    8541.29.00.95

    Objectid

    1080465392

    ECCN Code

    EAR99

    Pin Count

    3

    Risk Rank

    7.8

    Rohs Code

    Yes

    JESD-30 Code

    R-PDSO-G3

    Configuration

    SINGLE WITH BUILT-IN DIODE

    JEDEC-95 Code

    TO-236

    Package Shape

    RECTANGULAR

    Package Style

    SMALL OUTLINE

    Surface Mount

    YES

    Terminal Form

    GULL WING

    FET Technology

    METAL-OXIDE SEMICONDUCTOR

    Operating Mode

    ENHANCEMENT MODE

    Part Package Code

    SOT-23

    Terminal Position

    DUAL

    Number of Elements

    1

    Number of Terminals

    3

    Package Description

    SMALL OUTLINE, R-PDSO-G3

    Part Life Cycle Code

    Active

    Package Body Material

    PLASTIC/EPOXY

    Polarity/Channel Type

    N-CHANNEL

    Reach Compliance Code

    compliant

    Drain Current-Max (ID)

    2.5 A

    DS Breakdown Voltage-Min

    30 V

    Operating Temperature-Max

    150°C

    Power Dissipation-Max (Abs)

    1.4 W

    Transistor Element Material

    SILICON

    Drain Current-Max (Abs) (ID)

    2.5 A

    Peak Reflow Temperature (Cel)

    NOTSPECIFIED

    Power Dissipation Ambient-Max

    1.4 W

    Drain-source On Resistance-Max

    0.117 Ω

    Pulsed Drain Current-Max (IDM)

    10 A

    Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

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