RoHS

yes

Mount

Through Hole

Width

Height

Length

Pbfree

Weight

453.59237mg

Current

Voltage

FET Type

N-Channel

HTS Code

ECCN Code

EAR99

Inventory

12094

Lead Free

Lead Free

Packaging

Tape & Reel (TR)

Pin Count

3

Published

2012

Rise Time

7ns

Vgs (Max)

±20V

REACH SVHC

Rds On Max

Resistance

Technology

MOSFET (Metal Oxide)

Nominal Vgs

Part Status

Obsolete

RoHS Status

RoHS Compliant

Subcategory

Termination

JESD-30 Code

R-PSIP-W3

Configuration

JESD-609 Code

e3

Mounting Type

Through Hole

Terminal Form

WIRE

Current Rating

270mA

FET Technology

Number of Pins

Operating Mode

ENHANCEMENT MODE

Package / Case

E-Line-3

Contact Plating

Fall Time (Typ)

7 ns

Terminal Finish

MATTE TIN

Factory Lead Time

Input Capacitance

Power Dissipation

625mW

Terminal Position

Threshold Voltage

Number of Channels

1

Number of Elements

1

Turn On Delay Time

5 ns

Vgs(th) (Max) @ Id

2.4V @ 1mA

Voltage - Rated DC

60V

Dual Supply Voltage

Radiation Hardening

Turn-Off Delay Time

6 ns

Qualification Status

Not Qualified

Element Configuration

Single

Max Power Dissipation

Operating Temperature

-55°C~150°CTJ

Polarity/Channel Type

Power Dissipation-Max

625mW Ta

Reach Compliance Code

unknown

Number of Terminations

3

Rds On (Max) @ Id, Vgs

5 Ω @ 500mA, 10V

Transistor Application

SWITCHING

Feedback Cap-Max (Crss)

Drain to Source Resistance

Operating Temperature (Max)

Transistor Element Material

SILICON

Drain Current-Max (Abs) (ID)

0.27A

Gate to Source Voltage (Vgs)

20V

Continuous Drain Current (ID)

270mA

Peak Reflow Temperature (Cel)

260

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

5Ohm

Pulsed Drain Current-Max (IDM)

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Drain to Source Breakdown Voltage

60V

Input Capacitance (Ciss) (Max) @ Vds

35pF @ 18V

Time@Peak Reflow Temperature-Max (s)

40

Drive Voltage (Max Rds On,Min Rds On)

10V

Current - Continuous Drain (Id) @ 25°C

270mA Ta