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2498 In Stock
2N3740A
2498 In Stock
2N3740A
$36.92
Manufacturer No:
Central Semiconductor Corp
Manufacturer:
Central Semiconductor Corp
Category:
Power Bipolar Transistors
Package:
Description Differential:
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
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- QTY UNIT PRICE TOTAL PRICE
- 1 $35.8124 $35.8124
- 50 $1698.32 $33.9664
- 100 $3285.88 $32.8588
- 1000 $31382 $31.382
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4A, 60V, PNP, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN 2N3740A.MODR1
TT Electronics Power and Hybrid / Semelab Limited
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4A, 60V, PNP, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN 2N3740R
TT Electronics Power and Hybrid / Semelab Limited
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4A, 60V, PNP, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN 2N3740RR1
TT Electronics Power and Hybrid / Semelab Limited
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Inquire now
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN 2N3740R1
TT Electronics Resistors
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Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3740
Solid State Devices Inc (SSDI)
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Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, 2N3740
API Technologies Corp
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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN 2N3740AR
TT Electronics Resistors
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4A, 60V, PNP, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN 2N3740ARR1
TT Electronics Power and Hybrid / Semelab Limited
Pin To Pin
Inquire now
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN 2N3740AR1
TT Electronics Resistors
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4A, 60V, PNP, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN 2N3740A.MOD
TT Electronics Power and Hybrid / Semelab Limited
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4A, 60V, PNP, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN 2N3740A
TT Electronics Power and Hybrid / Semelab Limited
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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3740A
Central Semiconductor Corp
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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, JANTX2N3740
Solitron Devices Inc
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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, JANTXV2N3740
Solitron Devices Inc
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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, 2N3740A
Solitron Devices Inc
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Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3740
International Devices Inc
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Power Bipolar Transistor, 1A I(C), 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3740
Fairchild Semiconductor Corporation
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Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-213, Metal, 2 Pin 2N3740
Silicon Transistor Corporation
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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, 2N3740
Advanced Semiconductor Inc
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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3740A
Micro Commercial Components
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Type
DESCRIPTION
ECCN Code
EAR99
Pin Count
2
Rohs Code
No
Popularity
27
VCEsat-Max
0.6 V
Pbfree Code
No
Subcategory
Other Transistors
JESD-30 Code
O-MBFM-P2
Configuration
SINGLE
JEDEC-95 Code
TO-66
JESD-609 Code
e0
Package Shape
ROUND
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
PIN/PEG
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
Part Package Code
TO-66
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
2
Package Description
TO-66, 2 PIN
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
PNP
Reach Compliance Code
not_compliant
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
10
Operating Temperature-Max
200°C
Operating Temperature-Min
-65°C
Collector Current-Max (IC)
4 A
Power Dissipation-Max (Abs)
25 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
60 V
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Transition Frequency-Nom (fT)
4 MHz
Collector-Base Capacitance-Max
100 pF
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
Feature Products
200+
TrainedWorker
1500+
Existing manufacturers
150+
Export Country
12000+
Exported monthly
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