SALE

HoT

869 In Stock

BC858C-7-F

869 In Stock

BC858C-7-F

$0.04841

Manufacturer No:

Diodes Incorporated

Manufacturer:

Diodes Incorporated

Category:

Single BJT Transistors

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

Description Differential:

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  • QTY UNIT PRICE TOTAL PRICE
  • 1 $0.04696 $0.04696
  • 50 $2.227 $0.04454
  • 100 $4.308 $0.04308
  • 1000 $41.15 $0.04115

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    Type

    DESCRIPTION

    RoHS

    yes

    Mount

    Surface Mount

    Width

    1.4mm

    Height

    1mm

    Length

    3.05mm

    Pbfree

    yes

    Weight

    7.994566mg

    hFE Min

    420

    ECCN Code

    EAR99

    Frequency

    Inventory

    1424

    Lead Free

    Lead Free

    Packaging

    Tape & Reel (TR)

    Pin Count

    3

    Published

    2008

    REACH SVHC

    No SVHC

    Part Status

    Active

    Power - Max

    RoHS Status

    ROHS3 Compliant

    Subcategory

    Other Transistors

    Termination

    SMD/SMT

    JESD-30 Code

    Configuration

    JESD-609 Code

    e3

    Max Frequency

    100MHz

    Mounting Type

    Surface Mount

    Surface Mount

    Terminal Form

    GULL WING

    Current Rating

    Number of Pins

    3

    Package / Case

    TO-236-3, SC-59, SOT-23-3

    Contact Plating

    Tin

    Terminal Finish

    Transistor Type

    PNP

    Base Part Number

    BC858

    Factory Lead Time

    19 Weeks

    Power Dissipation

    300mW

    Terminal Position

    DUAL

    Number of Elements

    1

    Voltage - Rated DC

    Radiation Hardening

    Qualification Status

    Not Qualified

    Transition Frequency

    200MHz

    Element Configuration

    Single

    Max Breakdown Voltage

    Max Collector Current

    100mA

    Max Power Dissipation

    300mW

    Operating Temperature

    -65°C~150°CTJ

    Polarity/Channel Type

    PNP

    Reach Compliance Code

    Frequency - Transition

    Gain Bandwidth Product

    200MHz

    Number of Terminations

    3

    Transistor Application

    SWITCHING

    DC Current Gain-Min (hFE)

    Collector Current-Max (IC)

    Emitter Base Voltage (VEBO)

    5V

    Operating Temperature (Max)

    Power Dissipation-Max (Abs)

    Transistor Element Material

    SILICON

    Collector Base Voltage (VCBO)

    30V

    Max Junction Temperature (Tj)

    Peak Reflow Temperature (Cel)

    260

    Vce Saturation (Max) @ Ib, Ic

    650mV @ 5mA, 100mA

    Current - Collector (Ic) (Max)

    100mA

    Collector Emitter Voltage (VCEO)

    30V

    Current - Collector Cutoff (Max)

    15nA

    Moisture Sensitivity Level (MSL)

    1 (Unlimited)

    Collector Emitter Breakdown Voltage

    30V

    Collector Emitter Saturation Voltage

    -650mV

    Time@Peak Reflow Temperature-Max (s)

    40

    DC Current Gain (hFE) (Min) @ Ic, Vce

    420 @ 2mA 5V

    Voltage - Collector Emitter Breakdown (Max)

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