SALE

HoT

2093 In Stock

BC858CW-7-F

2093 In Stock

BC858CW-7-F

$18.72572

Manufacturer No:

Diodes Incorporated

Manufacturer:

Diodes Incorporated

Category:

Single BJT Transistors

Package:

Datasheet:

Description Differential:

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  • QTY UNIT PRICE TOTAL PRICE
  • 1 $18.16395 $18.16395
  • 50 $861.383 $17.22766
  • 100 $1666.589 $16.66589
  • 1000 $15916.86 $15.91686

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    Type

    DESCRIPTION

    Mfr

    RoHS

    yes

    Mount

    Surface Mount

    RoHS:

    Width

    1.35mm

    Brand:

    Height

    1mm

    Length

    2.2mm

    Pbfree

    yes

    Series

    Weight

    6.010099mg

    Package

    hFE Min

    Polarity

    ECCN Code

    EAR99

    Frequency

    200MHz

    Inventory

    11364

    Lead Free

    Packaging

    Tape & Reel (TR)

    Pin Count

    3

    Published

    2007

    Packaging:

    REACH SVHC

    No SVHC

    VCEsat-Max

    Part Status

    Active

    Power - Max

    RoHS Status

    ROHS3 Compliant

    Subcategory

    Other Transistors

    JESD-30 Code

    Subcategory:

    Configuration

    JEDEC-95 Code

    JESD-609 Code

    e3

    Manufacturer:

    Max Frequency

    Mounting Type

    Surface Mount

    Product Type:

    Surface Mount

    Terminal Form

    GULL WING

    Configuration:

    Current Rating

    Number of Pins

    3

    Package / Case

    SC-70, SOT-323

    Product Status

    Qualification:

    Case Connection

    Contact Plating

    Tin

    Mounting Style:

    Package / Case:

    Part # Aliases:

    Terminal Finish

    Transistor Type

    PNP

    Base Part Number

    BC858

    Lifecycle Status

    Factory Lead Time

    19 Weeks

    Power Dissipation

    200mW

    Product Category:

    Terminal Position

    DUAL

    Additional Feature

    Number of Elements

    1

    Voltage - Rated DC

    Radiation Hardening

    Qualification Status

    Not Qualified

    Transistor Polarity:

    Transition Frequency

    200MHz

    Element Configuration

    Single

    Max Breakdown Voltage

    30V

    Max Collector Current

    100mA

    Max Power Dissipation

    200mW

    Operating Temperature

    -65°C~150°CTJ

    Polarity/Channel Type

    PNP

    Reach Compliance Code

    Frequency - Transition

    Gain Bandwidth Product

    200MHz

    Number of Terminations

    3

    Transistor Application

    SWITCHING

    Pd - Power Dissipation:

    Supplier Device Package

    DC Current Gain-Min (hFE)

    Max Operating Temperature

    Min Operating Temperature

    Collector Current-Max (IC)

    Gain Bandwidth Product fT:

    Emitter Base Voltage (VEBO)

    5V

    Emitter- Base Voltage VEBO:

    Transistor Element Material

    SILICON

    Collector Base Voltage (VCBO)

    30V

    Collector- Base Voltage VCBO:

    Collector-Emitter Voltage-Max

    Maximum DC Collector Current:

    Peak Reflow Temperature (Cel)

    260

    Vce Saturation (Max) @ Ib, Ic

    650mV @ 5mA, 100mA

    Collector-Base Capacitance-Max

    Current - Collector (Ic) (Max)

    Maximum Operating Temperature:

    Minimum Operating Temperature:

    DC Collector/Base Gain hfe Min:

    Collector Emitter Voltage (VCEO)

    30V

    Current - Collector Cutoff (Max)

    15nA ICBO

    Moisture Sensitivity Level (MSL)

    1 (Unlimited)

    Collector Emitter Breakdown Voltage

    30V

    Collector Emitter Saturation Voltage

    -650mV

    Collector- Emitter Voltage VCEO Max:

    Time@Peak Reflow Temperature-Max (s)

    40

    Collector-Emitter Saturation Voltage:

    DC Current Gain (hFE) (Min) @ Ic, Vce

    420 @ 2mA 5V

    Voltage - Collector Emitter Breakdown (Max)

    Factory Pack Quantity:Factory Pack Quantity:

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