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1061 In Stock

BS170P

1061 In Stock

BS170P

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Manufacturer No:

Diodes Incorporated

Manufacturer:

Diodes Incorporated

Category:

Single MOSFETs Transistors

Package:

TO-226-3, TO-92-3 (TO-226AA)

Datasheet:

Description Differential:

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    Type

    DESCRIPTION

    RoHS

    yes

    Mount

    Surface Mount, Through Hole

    Width

    1.4mm

    Height

    1.1mm

    Length

    3mm

    Pbfree

    yes

    Weight

    453.59237mg

    Current

    Voltage

    FET Type

    N-Channel

    HTS Code

    ECCN Code

    EAR99

    Inventory

    2440

    Lead Free

    Lead Free

    Packaging

    Bulk

    Pin Count

    3

    Published

    1997

    Vgs (Max)

    ±20V

    REACH SVHC

    No SVHC

    Rds On Max

    Resistance

    5Ohm

    Technology

    MOSFET (Metal Oxide)

    Nominal Vgs

    3 V

    Part Status

    Active

    RoHS Status

    ROHS3 Compliant

    Subcategory

    Termination

    JESD-30 Code

    Configuration

    JESD-609 Code

    e3

    Mounting Type

    Through Hole

    Surface Mount

    Terminal Form

    WIRE

    Current Rating

    270mA

    Number of Pins

    3

    Operating Mode

    ENHANCEMENT MODE

    Package / Case

    TO-226-3, TO-92-3 (TO-226AA)

    Contact Plating

    Tin

    Terminal Finish

    Base Part Number

    Lifecycle Status

    Factory Lead Time

    17 Weeks

    Input Capacitance

    Power Dissipation

    625mW

    Terminal Position

    Threshold Voltage

    3V

    Additional Feature

    Number of Channels

    1

    Number of Elements

    1

    Turn On Delay Time

    10 ns

    Vgs(th) (Max) @ Id

    3V @ 1mA

    Voltage - Rated DC

    60V

    Dual Supply Voltage

    Radiation Hardening

    Turn-Off Delay Time

    10 ns

    Qualification Status

    Not Qualified

    Element Configuration

    Single

    Operating Temperature

    -55°C~150°CTJ

    Power Dissipation-Max

    625mW Ta

    Reach Compliance Code

    Number of Terminations

    3

    Rds On (Max) @ Id, Vgs

    5 Ω @ 200mA, 10V

    Transistor Application

    SWITCHING

    Feedback Cap-Max (Crss)

    Supplier Device Package

    DS Breakdown Voltage-Min

    Max Operating Temperature

    Min Operating Temperature

    Drain to Source Resistance

    Transistor Element Material

    SILICON

    Drain Current-Max (Abs) (ID)

    0.27A

    Gate to Source Voltage (Vgs)

    20V

    Continuous Drain Current (ID)

    270mA

    Max Junction Temperature (Tj)

    Peak Reflow Temperature (Cel)

    260

    Drain to Source Voltage (Vdss)

    Drain-source On Resistance-Max

    Moisture Sensitivity Level (MSL)

    1 (Unlimited)

    Drain to Source Breakdown Voltage

    60V

    Input Capacitance (Ciss) (Max) @ Vds

    60pF @ 10V

    Time@Peak Reflow Temperature-Max (s)

    40

    Drive Voltage (Max Rds On,Min Rds On)

    10V

    Current - Continuous Drain (Id) @ 25°C

    270mA Ta

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