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3196 In Stock

ZVN2106A

3196 In Stock

ZVN2106A

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Manufacturer No:

Diodes Incorporated

Manufacturer:

Diodes Incorporated

Category:

Single MOSFETs Transistors

Package:

TO-226-3, TO-92-3 (TO-226AA)

Datasheet:

Description Differential:

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    Type

    DESCRIPTION

    RoHS

    yes

    Mount

    Through Hole

    Width

    2.41mm

    Height

    4.01mm

    Length

    4.77mm

    Pbfree

    yes

    Series

    Weight

    453.59237mg

    FET Type

    N-Channel

    ECCN Code

    EAR99

    Inventory

    9731

    Lead Free

    Lead Free

    Packaging

    Bulk

    Pin Count

    3

    Published

    2006

    Rise Time

    Vgs (Max)

    ±20V

    Lead Pitch

    REACH SVHC

    No SVHC

    Rds On Max

    Resistance

    2Ohm

    Technology

    MOSFET (Metal Oxide)

    FET Feature

    Nominal Vgs

    Part Status

    Active

    RoHS Status

    ROHS3 Compliant

    Subcategory

    FET General Purpose Powers

    Configuration

    JEDEC-95 Code

    JESD-609 Code

    e3

    Mounting Type

    Through Hole

    Recovery Time

    Terminal Form

    WIRE

    Current Rating

    450mA

    Number of Pins

    3

    Operating Mode

    ENHANCEMENT MODE

    Package / Case

    TO-226-3, TO-92-3 (TO-226AA)

    Case Connection

    Contact Plating

    Fall Time (Typ)

    Terminal Finish

    Matte Tin (Sn)

    Base Part Number

    Factory Lead Time

    17 Weeks

    Input Capacitance

    Power Dissipation

    700mW

    Terminal Position

    BOTTOM

    Threshold Voltage

    2.4V

    Additional Feature

    Number of Channels

    1

    Number of Elements

    1

    Reference Standard

    Turn On Delay Time

    Vgs(th) (Max) @ Id

    2.4V @ 1mA

    Voltage - Rated DC

    60V

    Dual Supply Voltage

    Radiation Hardening

    No

    Turn-Off Delay Time

    Qualification Status

    Element Configuration

    Single

    Operating Temperature

    -55°C~150°CTJ

    Power Dissipation-Max

    700mW Ta

    Reach Compliance Code

    Number of Terminations

    3

    Rds On (Max) @ Id, Vgs

    2 Ω @ 1A, 10V

    Transistor Application

    Feedback Cap-Max (Crss)

    20 pF

    Supplier Device Package

    Max Operating Temperature

    Min Operating Temperature

    Drain to Source Resistance

    Transistor Element Material

    SILICON

    Drain Current-Max (Abs) (ID)

    0.45A

    Gate Charge (Qg) (Max) @ Vgs

    Gate to Source Voltage (Vgs)

    20V

    Avalanche Energy Rating (Eas)

    Continuous Drain Current (ID)

    450mA

    Max Junction Temperature (Tj)

    Peak Reflow Temperature (Cel)

    260

    Drain to Source Voltage (Vdss)

    Drain-source On Resistance-Max

    Pulsed Drain Current-Max (IDM)

    Manufacturer Package Identifier

    Moisture Sensitivity Level (MSL)

    1 (Unlimited)

    Drain to Source Breakdown Voltage

    60V

    Input Capacitance (Ciss) (Max) @ Vds

    75pF @ 18V

    Time@Peak Reflow Temperature-Max (s)

    40

    Drive Voltage (Max Rds On,Min Rds On)

    10V

    Current - Continuous Drain (Id) @ 25°C

    450mA Ta

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