RoHS

yes

Mount

Through Hole

Width

2.41mm

Height

4.01mm

Length

4.77mm

Pbfree

yes

Series

Weight

453.59237mg

Current

Voltage

FET Type

P-Channel

HTS Code

ECCN Code

EAR99

Inventory

6534

Lead Free

Lead Free

Packaging

Bulk

Pin Count

3

Published

2006

Rise Time

Vgs (Max)

±20V

REACH SVHC

No SVHC

Rds On Max

Resistance

14Ohm

Technology

MOSFET (Metal Oxide)

Nominal Vgs

Part Status

Active

RoHS Status

ROHS3 Compliant

Subcategory

Other Transistors

JESD-30 Code

Configuration

JEDEC-95 Code

TO-92

JESD-609 Code

e3

Mounting Type

Through Hole

Surface Mount

Terminal Form

WIRE

Current Rating

-230mA

Number of Pins

3

Operating Mode

ENHANCEMENT MODE

Package / Case

E-Line-3

Contact Plating

Tin

Fall Time (Typ)

Terminal Finish

Factory Lead Time

17 Weeks

Power Dissipation

700mW

Terminal Position

BOTTOM

Threshold Voltage

Number of Channels

1

Number of Elements

1

Turn On Delay Time

Vgs(th) (Max) @ Id

3.5V @ 1mA

Voltage - Rated DC

-45V

Radiation Hardening

Turn-Off Delay Time

Qualification Status

Not Qualified

Element Configuration

Single

Operating Temperature

-55°C~150°CTJ

Power Dissipation-Max

700mW Ta

Number of Terminations

3

Rds On (Max) @ Id, Vgs

14 Ω @ 200mA, 10V

Transistor Application

Supplier Device Package

DS Breakdown Voltage-Min

Max Operating Temperature

Min Operating Temperature

Drain to Source Resistance

Transistor Element Material

SILICON

Drain Current-Max (Abs) (ID)

Gate Charge (Qg) (Max) @ Vgs

Gate to Source Voltage (Vgs)

20V

Continuous Drain Current (ID)

230mA

Peak Reflow Temperature (Cel)

260

Drain to Source Voltage (Vdss)

45V

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Drain to Source Breakdown Voltage

Input Capacitance (Ciss) (Max) @ Vds

60pF @ 10V

Time@Peak Reflow Temperature-Max (s)

40

Drive Voltage (Max Rds On,Min Rds On)

10V

Current - Continuous Drain (Id) @ 25°C

230mA Ta