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2393 In Stock

BSS123TA

2393 In Stock

BSS123TA

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Manufacturer No:

Diodes Incorporated

Manufacturer:

Diodes Incorporated

Category:

Single MOSFETs Transistors

Package:

Datasheet:

Description Differential:

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    Type

    DESCRIPTION

    RoHS

    yes

    Type

    Mount

    Surface Mount

    RoHS:

    Width

    1.3mm

    Brand:

    Height

    1.1mm

    Length

    2.9mm

    Pbfree

    yes

    Weight

    7.994566mg

    Current

    Package

    Process

    Voltage

    FET Type

    N-Channel

    HTS Code

    ECCN Code

    EAR99

    Inventory

    5483

    Lead Free

    Lead Free

    Packaging

    Tape & Reel (TR)

    Pin Count

    Published

    2012

    Rise Time

    10ns

    Vgs (Max)

    ±20V

    Packaging:

    REACH SVHC

    No SVHC

    Resistance

    6Ohm

    Technology

    MOSFET (Metal Oxide)

    Nominal Vgs

    2.2 V

    Part Status

    Active

    RoHS Status

    ROHS3 Compliant

    Subcategory

    Technology:

    Termination

    JESD-30 Code

    Subcategory:

    Unit Weight:

    Channel Mode:

    Configuration

    JESD-609 Code

    e3

    Manufacturer:

    Mounting Type

    Surface Mount

    Product Type:

    Surface Mount

    Terminal Form

    GULL WING

    Configuration:

    Current Rating

    170mA

    Number of Pins

    3

    Operating Mode

    ENHANCEMENT MODE

    Package / Case

    TO-236-3, SC-59, SOT-23-3

    Case Connection

    Contact Plating

    Tin

    Fall Time (Typ)

    10 ns

    Mounting Style:

    Package / Case:

    Terminal Finish

    Transistor Type:

    Factory Lead Time

    17 Weeks

    Power Dissipation

    300mW

    Product Category:

    Terminal Position

    DUAL

    Threshold Voltage

    1.4V

    Additional Feature

    Number of Channels

    1

    Number of Elements

    1

    Turn On Delay Time

    8 ns

    Vgs(th) (Max) @ Id

    2V @ 1mA

    Voltage - Rated DC

    100V

    Dual Supply Voltage

    Number of Channels:

    Radiation Hardening

    No

    Turn-Off Delay Time

    13 ns

    Qualification Status

    Transistor Polarity:

    Element Configuration

    Single

    Operating Temperature

    -55°C~150°CTJ

    Power Dissipation-Max

    360mW Ta

    Reach Compliance Code

    Number of Terminations

    3

    Rds On (Max) @ Id, Vgs

    6 Ω @ 100mA, 10V

    Transistor Application

    SWITCHING

    Feedback Cap-Max (Crss)

    4 pF

    Max Dual Supply Voltage

    Pd - Power Dissipation:

    Supplier Device Package

    DS Breakdown Voltage-Min

    Drain to Source Resistance

    Vgs - Gate-Source Voltage:

    Transistor Element Material

    SILICON

    Typical Turn-On Delay Time:

    Drain Current-Max (Abs) (ID)

    Gate Charge (Qg) (Max) @ Vgs

    Gate to Source Voltage (Vgs)

    20V

    Typical Turn-Off Delay Time:

    Continuous Drain Current (ID)

    170mA

    Max Junction Temperature (Tj)

    150°C

    Peak Reflow Temperature (Cel)

    260

    Drain to Source Voltage (Vdss)

    Drain-source On Resistance-Max

    Id - Continuous Drain Current:

    Maximum Operating Temperature:

    Minimum Operating Temperature:

    Moisture Sensitivity Level (MSL)

    1 (Unlimited)

    Drain to Source Breakdown Voltage

    100V

    Rds On - Drain-Source Resistance:

    Input Capacitance (Ciss) (Max) @ Vds

    20pF @ 25V

    Time@Peak Reflow Temperature-Max (s)

    40

    Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

    Vds - Drain-Source Breakdown Voltage:

    Current - Continuous Drain (Id) @ 25°C

    170mA Ta

    Vgs th - Gate-Source Threshold Voltage:

    Factory Pack Quantity:Factory Pack Quantity:

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