200,000 PARTS INSTOCK
4 Hours Ready For Shipping
SALE
HoT
2897 In Stock
FSYC9055R4
2897 In Stock
FSYC9055R4
Call
Manufacturer No:
Harris Semiconductor
Manufacturer:
Harris Semiconductor
Category:
Power Field-Effect Transistors
Package:
Datasheet:
Description Differential:
Power Field-Effect Transistor, 59A I(D), 60V, 0.027ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Add to cart
GO RFQ
SALE
HoT
200,000 PARTS INSTOCK
4 Hours Ready For Shipping
QUALITY GUARANTEE
Also known feedback request
SUPPORT 24/7
Also known feedback
Contact Us , you can send samples for free
Type
DESCRIPTION
Objectid
1458167117
ECCN Code
EAR99
Risk Rank
9.83
Rohs Code
No
Subcategory
Other Transistors
JESD-30 Code
R-CBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Additional Feature
RADIATION HARDENED
Number of Elements
1
Number of Terminals
3
Package Description
CHIP CARRIER, R-CBCC-N3
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
P-CHANNEL
Reach Compliance Code
unknown
Drain Current-Max (ID)
59 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
60 V
Operating Temperature-Max
150°C
Power Dissipation-Max (Abs)
162 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
59 A
Drain-source On Resistance-Max
0.027 Ω
Pulsed Drain Current-Max (IDM)
177 A
We sincerely hope that we can be your best partner in the distribution of components! Keep trying .Go ahead with our mission.
Need Help
Monday - Friday: 9:00 - 18:00 Saturday: 11:00 - 15:00
sales@jxwic.com
Copyright © 2023 Jxwic All Rights Reserved