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FSYC9055R4

2897 In Stock

FSYC9055R4

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Manufacturer No:

Harris Semiconductor

Manufacturer:

Harris Semiconductor

Category:

Power Field-Effect Transistors

Package:

Datasheet:

Description Differential:

Power Field-Effect Transistor, 59A I(D), 60V, 0.027ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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    Type

    DESCRIPTION

    Objectid

    1458167117

    ECCN Code

    EAR99

    Risk Rank

    9.83

    Rohs Code

    No

    Subcategory

    Other Transistors

    JESD-30 Code

    R-CBCC-N3

    Configuration

    SINGLE WITH BUILT-IN DIODE

    JESD-609 Code

    e0

    Package Shape

    RECTANGULAR

    Package Style

    CHIP CARRIER

    Surface Mount

    YES

    Terminal Form

    NO LEAD

    FET Technology

    METAL-OXIDE SEMICONDUCTOR

    Operating Mode

    ENHANCEMENT MODE

    Case Connection

    DRAIN

    Terminal Finish

    TIN LEAD

    Terminal Position

    BOTTOM

    Additional Feature

    RADIATION HARDENED

    Number of Elements

    1

    Number of Terminals

    3

    Package Description

    CHIP CARRIER, R-CBCC-N3

    Part Life Cycle Code

    Obsolete

    Qualification Status

    Not Qualified

    Package Body Material

    CERAMIC, METAL-SEALED COFIRED

    Polarity/Channel Type

    P-CHANNEL

    Reach Compliance Code

    unknown

    Drain Current-Max (ID)

    59 A

    Transistor Application

    SWITCHING

    DS Breakdown Voltage-Min

    60 V

    Operating Temperature-Max

    150°C

    Power Dissipation-Max (Abs)

    162 W

    Transistor Element Material

    SILICON

    Drain Current-Max (Abs) (ID)

    59 A

    Drain-source On Resistance-Max

    0.027 Ω

    Pulsed Drain Current-Max (IDM)

    177 A

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