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2143 In Stock

JANTX2N6277

2143 In Stock

JANTX2N6277

$691.93

Manufacturer No:

Vishay Semiconductors

Manufacturer:

Vishay Semiconductors

Category:

Power Bipolar Transistors

Package:

Datasheet:

Description Differential:

Power Bipolar Transistor, 50A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin

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  • QTY UNIT PRICE TOTAL PRICE
  • 1 $671.1721 $671.1721
  • 50 $31828.78 $636.5756
  • 100 $61581.77 $615.8177
  • 1000 $588140.5 $588.1405

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Substitutes
50A, 150V, NPN, Si, POWER TRANSISTOR, TO-204AE, HERMETIC SEALED, METAL, TO-3, 2 PIN

2N6277-JQR-BR1

TT Electronics Power and Hybrid / Semelab Limited

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Power Bipolar Transistor, 50A I(C), NPN

2N6277

Semiconductor Technology Inc

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TRANSISTOR,BJT,NPN,150V V(BR)CEO,50A I(C),TO-3

JANTX2N6277

onsemi

Pin to Pin

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50A, 150V, NPN, Si, POWER TRANSISTOR, TO-204AE, HERMETIC SEALED, METAL, TO-3, 2 PIN

2N6277R1

TT Electronics Power and Hybrid / Semelab Limited

Pin to Pin

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50A, 150V, NPN, Si, POWER TRANSISTOR, TO-204AE, HERMETIC SEALED, METAL, TO-3, 2 PIN

2N6277.MODR1

TT Electronics Power and Hybrid / Semelab Limited

Pin to Pin

Inquire now

    Type

    DESCRIPTION

    HTS Code

    8541.29.00.95

    ECCN Code

    EAR99

    Popularity

    361

    VCEsat-Max

    3 V

    JESD-30 Code

    O-MBFM-P2

    Configuration

    SINGLE

    JEDEC-95 Code

    TO-204AE

    Package Shape

    ROUND

    Package Style

    FLANGE MOUNT

    Surface Mount

    NO

    Terminal Form

    PIN/PEG

    Case Connection

    COLLECTOR

    Terminal Finish

    NOT SPECIFIED

    Terminal Position

    BOTTOM

    Number of Elements

    1

    Reference Standard

    MIL

    Number of Terminals

    2

    Package Description

    FLANGE MOUNT, O-MBFM-P2

    Part Life Cycle Code

    Obsolete

    Qualification Status

    Not Qualified

    Package Body Material

    METAL

    Polarity/Channel Type

    NPN

    Reach Compliance Code

    unknown

    Transistor Application

    SWITCHING

    Turn-off Time-Max (toff)

    1050 ns

    DC Current Gain-Min (hFE)

    10

    Operating Temperature-Max

    200°C

    Collector Current-Max (IC)

    50 A

    Transistor Element Material

    SILICON

    Collector-Emitter Voltage-Max

    150 V

    Power Dissipation Ambient-Max

    250 W

    Transition Frequency-Nom (fT)

    30 MHz

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