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1910 In Stock
ZTX555
1910 In Stock
ZTX555
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Manufacturer No:
Diodes Incorporated
Manufacturer:
Diodes Incorporated
Category:
Single BJT Transistors
Package:
E-Line-3
Datasheet:
Description Differential:
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Type
DESCRIPTION
RoHS
yes
Mount
Through Hole
Width
2.41mm
Height
4.01mm
Length
4.77mm
Pbfree
Weight
453.59237mg
HTS Code
8541.29.00.75
ECCN Code
EAR99
Frequency
Inventory
12067
Lead Free
Packaging
Bulk
Pin Count
3
Published
2006
REACH SVHC
Part Status
Obsolete
Power - Max
RoHS Status
RoHS Compliant
Subcategory
Other Transistors
JESD-30 Code
R-PSIP-W3
Configuration
JEDEC-95 Code
JESD-609 Code
Mounting Type
Through Hole
Surface Mount
Terminal Form
WIRE
Current Rating
-1A
Number of Pins
Package / Case
E-Line-3
Contact Plating
Terminal Finish
Transistor Type
PNP
Base Part Number
ZTX555
Factory Lead Time
Power Dissipation
Terminal Position
Number of Elements
1
Voltage - Rated DC
-150V
Radiation Hardening
Qualification Status
Not Qualified
Transition Frequency
100MHz
Element Configuration
Single
Max Breakdown Voltage
Max Collector Current
1A
Max Power Dissipation
1W
Operating Temperature
-55°C~200°CTJ
Polarity/Channel Type
PNP
Reach Compliance Code
Frequency - Transition
Gain Bandwidth Product
100MHz
Number of Terminations
3
Transistor Application
Emitter Base Voltage (VEBO)
-5V
Transistor Element Material
SILICON
Continuous Collector Current
-1A
Collector Base Voltage (VCBO)
-160V
Peak Reflow Temperature (Cel)
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Current - Collector (Ic) (Max)
1A
Collector Emitter Voltage (VCEO)
300mV
Current - Collector Cutoff (Max)
100nA ICBO
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
-300mV
Time@Peak Reflow Temperature-Max (s)
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 300mA 10V
Voltage - Collector Emitter Breakdown (Max)
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