RoHS

yes

Mount

Through Hole

Width

2.41mm

Height

4.01mm

Length

4.77mm

Pbfree

yes

Weight

453.59237mg

hFE Min

HTS Code

8541.29.00.75

ECCN Code

EAR99

Frequency

Inventory

38084

Lead Free

Lead Free

Packaging

Bulk

Pin Count

3

Published

2012

REACH SVHC

No SVHC

VCEsat-Max

Part Status

Active

Power - Max

1W

RoHS Status

ROHS3 Compliant

Subcategory

Other Transistors

Halogen Free

JESD-30 Code

Configuration

JEDEC-95 Code

JESD-609 Code

e3

Mounting Type

Through Hole

Surface Mount

Terminal Form

WIRE

Current Rating

-3A

Number of Pins

3

Package / Case

E-Line-3

Case Connection

Contact Plating

Terminal Finish

Matte Tin (Sn)

Transistor Type

PNP

Base Part Number

Lifecycle Status

Factory Lead Time

Power Dissipation

Terminal Position

Additional Feature

Number of Elements

1

Reference Standard

Voltage - Rated DC

-15V

Radiation Hardening

No

Qualification Status

Transition Frequency

150MHz

Element Configuration

Single

Max Breakdown Voltage

Max Collector Current

3A

Max Power Dissipation

1W

Operating Temperature

-55°C~200°CTJ

Polarity/Channel Type

PNP

Frequency - Transition

100MHz

Gain Bandwidth Product

150MHz

Number of Terminations

3

Transistor Application

Supplier Device Package

DC Current Gain-Min (hFE)

Max Operating Temperature

Min Operating Temperature

Emitter Base Voltage (VEBO)

-5V

Transistor Element Material

SILICON

Continuous Collector Current

-3A

Collector Base Voltage (VCBO)

-20V

Max Junction Temperature (Tj)

Peak Reflow Temperature (Cel)

260

Vce Saturation (Max) @ Ib, Ic

330mV @ 200mA, 3A

Current - Collector (Ic) (Max)

Manufacturer Package Identifier

E-Line

Collector Emitter Voltage (VCEO)

330mV

Current - Collector Cutoff (Max)

100nA ICBO

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Collector Emitter Breakdown Voltage

15V

Collector Emitter Saturation Voltage

-500mV

Time@Peak Reflow Temperature-Max (s)

40

DC Current Gain (hFE) (Min) @ Ic, Vce

300 @ 10mA 1V

Voltage - Collector Emitter Breakdown (Max)