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2149 In Stock

ZXT1M322TA

2149 In Stock

ZXT1M322TA

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Manufacturer No:

Diodes Incorporated

Manufacturer:

Diodes Incorporated

Category:

Single BJT Transistors

Package:

3-PowerSMD, Flat Leads

Datasheet:

Description Differential:

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    Type

    DESCRIPTION

    RoHS

    yes

    Mount

    Surface Mount

    Width

    2mm

    Height

    1mm

    Length

    2mm

    Pbfree

    Weight

    hFE Min

    HTS Code

    ECCN Code

    EAR99

    Frequency

    110MHz

    Inventory

    15073

    Lead Free

    Lead Free

    Packaging

    Tape & Reel (TR)

    Pin Count

    5

    Published

    2006

    REACH SVHC

    VCEsat-Max

    Part Status

    Obsolete

    Power - Max

    RoHS Status

    ROHS3 Compliant

    Subcategory

    Other Transistors

    JESD-30 Code

    S-PDSO-F3

    Configuration

    JESD-609 Code

    e3

    Max Frequency

    Mounting Type

    Surface Mount

    Surface Mount

    Terminal Form

    Current Rating

    -4A

    Number of Pins

    322

    Package / Case

    3-PowerSMD, Flat Leads

    Case Connection

    COLLECTOR

    Contact Plating

    Terminal Finish

    Matte Tin (Sn)

    Transistor Type

    PNP

    Base Part Number

    ZXT1M322

    Factory Lead Time

    Power Dissipation

    3W

    Terminal Position

    DUAL

    Additional Feature

    Number of Elements

    1

    Voltage - Rated DC

    -12V

    Radiation Hardening

    Qualification Status

    Not Qualified

    Transition Frequency

    110MHz

    Element Configuration

    Single

    Max Breakdown Voltage

    12V

    Max Collector Current

    4A

    Max Power Dissipation

    3W

    Operating Temperature

    -55°C~150°CTJ

    Polarity/Channel Type

    PNP

    Reach Compliance Code

    Frequency - Transition

    Gain Bandwidth Product

    110MHz

    Number of Terminations

    3

    Transistor Application

    SWITCHING

    Supplier Device Package

    Max Operating Temperature

    Min Operating Temperature

    Emitter Base Voltage (VEBO)

    7.5V

    Power Dissipation-Max (Abs)

    Transistor Element Material

    SILICON

    Continuous Collector Current

    -4A

    Collector Base Voltage (VCBO)

    -20V

    Peak Reflow Temperature (Cel)

    260

    Vce Saturation (Max) @ Ib, Ic

    300mV @ 150mA, 4A

    Collector-Base Capacitance-Max

    Current - Collector (Ic) (Max)

    Collector Emitter Voltage (VCEO)

    300mV

    Current - Collector Cutoff (Max)

    25nA

    Moisture Sensitivity Level (MSL)

    1 (Unlimited)

    Collector Emitter Breakdown Voltage

    12V

    Collector Emitter Saturation Voltage

    -240mV

    Time@Peak Reflow Temperature-Max (s)

    40

    DC Current Gain (hFE) (Min) @ Ic, Vce

    180 @ 2.5A 2V

    Voltage - Collector Emitter Breakdown (Max)

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