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2726 In Stock
2N7002L6327
2726 In Stock
2N7002L6327
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Manufacturer No:
Infineon Technologies AG
Manufacturer:
Infineon Technologies AG
Category:
Small Signal Field-Effect Transistors
Package:
Datasheet:
Description Differential:
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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Type
DESCRIPTION
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
30
Subcategory
FET General Purpose Power
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Number of Elements
1
Source Content uid
2N7002L6327
Number of Terminals
3
Package Description
SMALL OUTLINE, R-PDSO-G3
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
0.3 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
3 pF
DS Breakdown Voltage-Min
60 V
Operating Temperature-Max
150°C
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
0.5 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
0.3 A
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
3 Ω
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